Advances in CMOS technology have made MOSFET a serious contender at RF. High frequency performance of the device is characterized by transit frequency f t , maximum frequency of oscillation f max , minimum noise figure NF min . This paper presents above figures of merits for optically controlled Silicon N-MOSFET, illuminated by optical source of photon energy greater than bandgap of Silicon. The figures of merit show improvement as compared to dark condition, indicating application of device as potential candidate in optoelectronic applications.
Modelling of optically illuminated MOSFET is done considering the substrate effect to evaluate admittance and scattering parameters for microwave frequency applications. Analysis of various gains and figure of merit is also incorporated indicating that optically controlled MOSFET can be used in optical communication circuits with enhanced electrical characteristics.
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