Power Gain Analysis of Optically Illuminated MOSFET

Jain, Promil; Mishra, Bimal Kumar; Phade, Gayatri

doi:10.5120/8130-1880

Cited by 2 publications

(2 citation statements)

References 14 publications

(19 reference statements)

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“…The device simulator does not make a distinction between the intrinsic and parasitic parts of the device. The Y parameters are simulated using the (2) for each DC bias condition as in [11]. The y jk parameters are obtained by applying a small-signal voltage at the k th terminal and detecting current at the j th terminal while all other terminals are AC grounded with following relationship…”

Section: Figure 1 Schematic Of Ldd Mosfetmentioning

confidence: 99%

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Evaluation of Optically Illuminated Mosfet Characteristics by Tcad Simulation

Jain¹,

B.K²

2013

VLSICS

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In this paper we report effect of optical illumination on Silicon MOSFET. The MOSFET has been studied in respect of current voltage, transconductance admittance and scattering parameters. Gain analysis of the Silicon MOSFET is done in dark and under optical illumination. The device is fabricated using ATHENA™ process simulator and the device simulation is performed using ATLAS™ from SILVACO international. The simulation results indicate potential of MOSFET as optically sensitive structure which can be used for increase in data transmission/reception rates, reduction of interconnect delays, elimination of clock skew, or as a photodetector for optoelectronic applications at low and radio frequency.

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Section: Figure 1 Schematic Of Ldd Mosfetmentioning

confidence: 99%

“…Y and S parameters are small signal parameters by definition and high frequency behaviour of the device is determined around a bias point over its operational bandwidth [10]. The S parameters are also important as they are used to determine signal power gain and various figures of merit [11] .…”

Section: Introductionmentioning

confidence: 99%