Absolute total and partial cross-sections for the electron impact ionization of TiCl4

Basner, R.; Schmidt, Martin; Becker, K.; Tarnovsky, V.; Deutsch, Hans‐Peter

doi:10.1016/s0040-6090(00)01143-3

Cited by 21 publications

(36 citation statements)

References 20 publications

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“…The two experimental setups used in the present experiments have been described in detail in earlier publications 8,9,19,20,22,[26][27][28] and only a brief summary will be given here.…”

Section: Experimental Apparatusmentioning

confidence: 99%

“…19,20,[22][23][24][25] Figure 1 shows the results of the horizontal sweeps for four representative ions, the SiCl 4 + parent ion, the two molecular SiCl 3 + and SiCl + , and the atomic ion Si + . We carried out a full horizontal sweep of the extracted ion beam using a double-focusing mass spectrometer.…”

Section: A the Time-of-flight Mass Spectrometer "Tof-ms…mentioning

confidence: 99%

“…We carried out a full horizontal sweep of the extracted ion beam using a double-focusing mass spectrometer. Similar to what was done before, 19,20,23,24 we established empirically the experimental conditions that guaranteed a 100% ion transmission from the ion source to the detector in the TOF-MS. These measurements were carried out in a highresolution double-focusing sector-field mass spectrometer and serve as a qualitative check for the presence of channels leading to the formation of energetic fragment ions.…”

Section: A the Time-of-flight Mass Spectrometer "Tof-ms…mentioning

confidence: 99%

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Electron-impact ionization of silicon tetrachloride (SiCl4)

Basner

Gutkin

Mahoney

et al. 2005

The Journal of Chemical Physics

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We measured absolute partial cross sections for the formation of various singly charged and doubly charged positive ions produced by electron impact on silicon tetrachloride (SiCl4) using two different experimental techniques, a time-of-flight mass spectrometer (TOF-MS) and a fast-neutral-beam apparatus. The energy range covered was from the threshold to 900 eV in the TOF-MS and to 200 eV in the fast-neutral-beam apparatus. The results obtained by the two different experimental techniques were found to agree very well (better than their combined margins of error). The SiCl3(+) fragment ion has the largest partial ionization cross section with a maximum value of slightly above 6x10(-20) m2 at about 100 eV. The cross sections for the formation of SiCl4(+), SiCl+, and Cl+ have maximum values around 4x10(-20) m2. Some of the cross-section curves exhibit an unusual energy dependence with a pronounced low-energy maximum at an energy around 30 eV followed by a broad second maximum at around 100 eV. This is similar to what has been observed by us earlier for another Cl-containing molecule, TiCl4 [R. Basner, M. Schmidt, V. Tamovsky, H. Deutsch, and K. Becker, Thin Solid Films 374 291 (2000)]. The maximum cross-section values for the formation of the doubly charged ions, with the exception of SiCl3(++), are 0.05x10(-20) m2 or less. The experimentally determined total single ionization cross section of SiCl4 is compared with the results of semiempirical calculations.

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“…The two experimental setups used in the present experiments have been described in detail in earlier publications 8,9,19,20,22,[26][27][28] and only a brief summary will be given here.…”

Section: Experimental Apparatusmentioning

confidence: 99%

Section: A the Time-of-flight Mass Spectrometer "Tof-ms…mentioning

confidence: 99%

Section: A the Time-of-flight Mass Spectrometer "Tof-ms…mentioning

confidence: 99%

See 1 more Smart Citation

Electron-impact ionization of silicon tetrachloride (SiCl4)

Basner

Gutkin

Mahoney

et al. 2005

The Journal of Chemical Physics

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“…Several m/z values from the fragmentation pattern of TiCl4 were observed (Table I) and the intensities of the measured fragments are in accordance with the reference mass spectrum. [21][22][23] Closer consideration is given for m/z = 153 because it has the highest intensity in the mass spectrum of TiCl4. In the measurements shown in Figure 3a, TiF4 is pulsed alone prior to the ALD sequence for reference to see if certain m/z would originate from the precursor itself.…”

Section: Resultsmentioning

confidence: 99%

Reaction mechanism studies on atomic layer deposition process of AlF3

Nieminen

Ritala

2022

Journal of Vacuum Science &Amp; Technology A

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In this work, the reaction mechanism in the atomic layer deposition (ALD) process of AlF3 thin films is studied with in situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). The depositions are done with AlCl3 and TiF4 as precursors.Similar to many metal fluoride films deposited by ALD, the growth rate of the AlF3 is strongly temperature dependent. In addition, at low temperatures the growth rate is exceptionally high for a traditional ALD process. In this study, the reasons behind these characteristics are studied and a detailed step-by-step mechanism for the AlF3 film growth process is presented.

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“…All other ionization crosssection measurements are carried out using a time-offlight mass spectrometer (TOF-MS) [4,5] with high detection efficiency for fragment ions with significant excess kinetic energy (see the following). A schematic diagram of the TOF-MS is shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

Electron Induced Ionization Of Molecules With Plasma-Technological Relevance

Basner¹

2003

AIP Conference Proceedings

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This article describes recent experimental results for the dissociative electron impact ionization of the SiF 4 and B 2 H 6 molecules using the time-of-flight mass spectrometric technique. A detailed description of the experimental method is given. Complete sets of the absolute ionization cross sections for the formation of all ions from SiF 4 and from B 2 H 6 were determined with an overall uncertainty of +15% in the energy range from threshold to 200 eV. Additional measurements using a sector-field mass spectrometer revealed that fragment ions of SiF 4 as well as of B 2 H 6 are formed with significant excess kinetic energy.

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Absolute total and partial cross-sections for the electron impact ionization of TiCl4

Cited by 21 publications

References 20 publications

Electron-impact ionization of silicon tetrachloride (SiCl4)

Electron-impact ionization of silicon tetrachloride (SiCl4)

Reaction mechanism studies on atomic layer deposition process of AlF3

Electron Induced Ionization Of Molecules With Plasma-Technological Relevance

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