Abrasive Machining of Silicon

Tönshoff, Hans Kurt; Schmieden, W. v.; Inasaki, Ichiro; König, Wilfried; Spur, Günter

doi:10.1016/s0007-8506(07)62999-0

Cited by 184 publications

(86 citation statements)

References 22 publications

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“…The demerits associated with these processes include poor grindability, high manufacturing cost, and subsurface damage [1]. Furthermore, the abrasive processes will cause surface flatness deviation due to its uncontrollable material removal resulting in the machined profile inaccuracy [2]. Therefore, after grinding and lapping processes, the chemical-mechanical polishing (CMP) is essential to remove the subsurface damage layer caused by the hard abrasive particles, which makes a very costly production [3].…”

Section: Introductionmentioning

confidence: 99%

A review on ductile mode cutting of brittle materials

2018

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Brittle materials have been widely employed for industrial applications due to their excellent mechanical, optical, physical and chemical properties. But obtaining smooth and damage-free surface on brittle materials by traditional machining methods like grinding, lapping and polishing is very costly and extremely time consuming. Ductile mode cutting is a very promising way to achieve high quality and crack-free surfaces of brittle materials. Thus the study of ductile mode cutting of brittle materials has been attracting more and more efforts. This paper provides an overview of ductile mode cutting of brittle materials including ductile nature and plasticity of brittle materials, cutting mechanism, cutting characteristics, molecular dynamic simulation, critical undeformed chip thickness, brittle-ductile transition, subsurface damage, as well as a detailed discussion of ductile mode cutting enhancement. It is believed that ductile mode cutting of brittle materials could be achieved when both crack-free and no subsurface damage are obtained simultaneously.

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Section: Introductionmentioning

confidence: 99%

A review on ductile mode cutting of brittle materials

2018

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“…Fig. 2 shows a typical process flow for making semiconductor devices (or, chips) [20][21][22][23][24]. For simplicity, some processes are omitted in the figure, for example, edge grinding, edge polishing, and laser marking.…”

Section: From Thinning Of Completed Device Wafers To Flattening Of Slmentioning

confidence: 99%

“…There is a mechanism to feed the ingot (or the blade) toward the blade (or the ingot). More information about ID sawing can be found in the literature [14,23,[71][72][73][74][75].…”

Section: Interrelationship Between Grinding and Slicingmentioning

confidence: 99%

Grinding of silicon wafers: A review from historical perspectives

Pei

Fisher

Liu

2008

International Journal of Machine Tools and Manufacture

150

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The majority of semiconductor devices are built on silicon wafers. Manufacturing of high quality silicon wafers involves several machining processes including grinding. This review paper discusses historical perspectives on grinding of silicon wafers, impacts of wafer size progression on applications of grinding in silicon wafer manufacturing, and interrelationships between grinding and two other silicon machining processes (slicing and polishing). It is intended to help * Corresponding author. Tel.: +1 785 532 3436; fax: +1 785 532 3738. E-mail address: zpei@ksu.edu (Z.J. Pei). 1 readers to gain a more comprehensive view on grinding of silicon wafers, and to be instrumental for research and development in grinding of wafers made from other materials (such as gallium arsenide, germanium, lithium niobate, sapphire, and silicon carbide).

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“…The fundamental configurationis regarded as optimum for producing large diameter substrates that meet industry specifications for total thickness variation (TTV)and site flatness (SFQR) [1,2].The process is also used for "backgrinding" after microfabrication where the substrate thickness is reduced to a practicable minimum to conform tocritical end-usedesign requirements [3,4]. In both "back-end" and "front end" variants of the process, minimisation of surface roughness and subsurface damage, is always a critical driver in order to maximise the structural integrity of the substrate and minimise the significant costs of subsequent processing [1,5].…”

Section: Introductionmentioning

confidence: 99%

“…The process engenders by definition [1] a very specific machine and tool configuration, shown schematically in figure 1. It comprisesnominally parallel but offset axes of rotation of tool and work with unilateral engagement of the work surface as shown.…”

Section: Introductionmentioning

confidence: 99%

Dual mode control of the rotational grinding process

2012

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Publisher's statementThis is the author's version of a work that was accepted for publication in CIRP Annals -Manufacturing Technology. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in CIRP AnnalsManufacturing Technology (61, 1, (2012) The rotational grinding process enables the production of substrates to meet the submicron planarity specifications required for microfabrication of semiconductor integrated circuits. Improvements in process capability, with respect to both form and finish, have been generally realised by the development of machine tools and systems based on a principle of precise and predictable "position" control. An alternative principle for optimisation is demonstrated here comprising a dual mode control system where a "finishing mode" is based on local normal force control. Test results show significant relative improvements in levels of surface roughness and a reduction in the normal spatial variation.

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Abrasive Machining of Silicon

Cited by 184 publications

References 22 publications

A review on ductile mode cutting of brittle materials

A review on ductile mode cutting of brittle materials

Grinding of silicon wafers: A review from historical perspectives

Dual mode control of the rotational grinding process

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