About a Group of Three‐Component Compounds being Analogous to Binary Semiconductors of the A^III B^VI Type

Negative-differential-resistance effects in TlInTe2 ternary semiconductor

“…TlInTe 2 is a P-type semiconductor with a fibrous structure that is sometimes being referred to as being quasi-one-dimensional [13]. Numerous studies determined physical and crystallographic data, such as melting point, density, form and size of the crystal cell [14][15][16]. Other investigations analyzed properties of the electronic band structure, like electrical conductivity, energy gaps, position of the acceptor levels and carrier concentration [17][18][19][20].…”

Phase relations in ferroelectric/ferromagnetic TlInS2–TlCoS2 and TlGaSe2–TlCoSe2 systems

“…The initial paraelectric phase of TlInS 2 and TlGaSe 2 is characterized by the space symmetric group of C 6 2h . PT into IC -phase is accompanied by a soft mode condensation (at T i = 216 K and 120 K, respectively) with the wave vector q i = (δ, δ, 0.25) in the Brillouin zone, where δ is the incommensurate parameter [13]. At T c ∼ 201 K and 107 K, respectively the δ value jumps to zero, and the crystals TlInS 2 and TlGaSe 2 exhibit a structural PT to commensurate ferroelectric phase with the wave vector of q c = (0, 0, 0.25) [25][26][27][28][29].…”

“…The first investigations of semiconductor properties of TlInS 2 and TlGaSe 2 were performed by the authors of [13][14]. Later dielectric properties, and ferroelectric phase transitions in the same compounds were studied [15][16][17][18].…”

Superionic Conductivity and Specific Effects Induced by γ-Radiation in Nanofibrous TlGaTe2 Crystals

“…The electrical properties of the TlGaTe2 compound were studied in Guseynov et al (1967) and Guseynov et al (1970). The calculations of the energy band structure of TlGaTe2 showed that the top of the valence band is located at the high symmetry point T at the surface of the Brillouin zone, while the bottom of the conduction band is located at the line D (Godzhaev et al, 2004).…”