Negative-differential-resistance effects in TlInTe2 ternary semiconductor

Al-Ghamdi, Ahmed A.; Nagat, A. T.; Bahabri, F.S.; Al-Orainy, R. H.; Alharbi, S. R.; Al-Hazmi, Faten

doi:10.1016/j.jallcom.2009.04.142

Cited by 9 publications

(2 citation statements)

References 24 publications

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“…The electrical switching phenomena reported by Ovshinsky [3][4][5] have been investigated in many ways and for different types of materials including chalcogenide semiconductors, organic semiconductors, oxides, single crystals and amorphous semiconductor thin films. Electrical switching can be defined as a rapid and reversible transition between a highly resistive state (OFF) and a conductive state (ON), driven by an external electric field and characterized by a threshold voltage.…”

Section: Introductionmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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Electrical and switching property of amorphous defect chalcopyrite ZnGa 2 Te 4 thin films prepared by thermal evaporation technique has been studied. The elemental chemical compositions of the prepared bulk as well as the asdeposited film were determined by means of energy dispersive X-ray spectrometry. X-ray diffraction pattern revealed that the powder compound is polycrystalline and the asdeposited and the annealed films at t a B 548 K have the amorphous phase, while that the annealed at t C 573 K are polycrystalline with a single phase of a defect chalcopyrite structure similar to that of the synthesized material. The great advantage of this material is the capability to appear in two different phases, the amorphous and the crystalline phases, with rather different electrical properties. Both dynamic and static I-V characteristics and the switching phenomenon at 601 nm are investigated. The threshold switching mechanism was explained by a thermal model of switching, i.e., joule heating with an electrically conducting channel. ZnGa 2 Te 4 is good candidate in phase change memory device.

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Section: Introductionmentioning

confidence: 99%

Memory switching of ZnGa2Te4 thin films

et al. 2012

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“…We can also observe that TlInSeS is a quaternary semiconductor exhibiting S-type I-V characteristics, similar to the curves shown by many authors. [13][14][15][16][17][18] 3.2 Temperature dependence of I-V characteristics The temperature dependence of the I-V characteristics is an important factor in choosing a switching material for an information-storage application. In the present study, the effect of the temperature on the I-V characteristics and the switching behaviour of the TlInSeS compound have been investigated in the temperature range from 173 to 303 K under static conditions, as shown in Fig.…”

Section: Current-controlled Negative Resistance (Ccnr) Withmentioning

confidence: 99%

Negative Resistance and Memory Effects in TlInSeS Single Crystals

Garni¹

2013

Jpn. J. Appl. Phys.

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Investigation of the switching phenomenon in TlInSeS single crystals revealed that its behaviour is typical of a memory switch. The switching process occurs symmetrically which, means it takes place with both polarities on the crystal. The current–voltage characteristics (CVC) of symmetrical Ag–TlInSeS–Ag structures exhibit two distinct regions: a high-resistance OFF-state and a low-resistance ON-state that has negative differential resistance (NDR). TlInSeS is a quaternary semiconductor that exhibits S-type CVC. The experimental results indicate that the switching phenomenon in our sample is very sensitive to temperature, illumination dose, and sample thickness. The switching parameters were observed under various ambient conditions. The present study is the first investigation of the switching phenomenon in TlInSeS. The data are presented alongside full theoretical curves that are drawn as guides for the eye.

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Thermoelectric behavior of Tl2GaInTe4 crystals

Abdulwahed

2024

Indian J Phys

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Negative-differential-resistance effects in TlInTe2 ternary semiconductor

Cited by 9 publications

References 24 publications

Memory switching of ZnGa2Te4 thin films

Memory switching of ZnGa2Te4 thin films

Negative Resistance and Memory Effects in TlInSeS Single Crystals

Thermoelectric behavior of Tl2GaInTe4 crystals

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