Abnormal Oxidation of Nickel Silicide on N-Type Substrate and Effect of Preamorphization Implantation

Abstract

For the analysis of plasma flow velocity, the Mach probe is widely used. Depending on the existence of superthermal electrons particularly at energies higher than the probe biasing voltage, collected ion saturation current can be reduced. This phenomenon can cause considerable errors in flow velocity estimation. The effect of superthermal electrons has been investigated in the steady-state linear divertor plasma simulator MAP-II. The directional measurement of electron energy distribution function (EEDF) suggests the energy of superthermal electrons and their generation mechanisms. The directional dependence of superthermal electrons is clearly observed from the angular distribution of ion saturation current measured using the Mach probe and a directional Langmuir probe (DLP). The error in flow velocity estimation under the conditions of a weakly magnetized plasma (a p = i $ 1) is calculated.

Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device

“…The remaining Si reacts with oxygen and forms an unintended SiO 2 layer on the nickel (germano)silicide. 17,18) This oxide layer on the silicide layer becomes severely agglomerated and may cause a very high sheet resistance. These results were confirmed by AES measurement, as discussed later in this paper.…”

Influence of Incorporating Rare Earth Metals on the Schottky Barrier Height of Ni Silicide

“…3,4) Although poor thermal stability is a primary obstacle in applying Ni silicide to nanoscale CMOSFETs, it has been reported that its thermal stability can be improved. [5][6][7][8][9][10][11] Several studies have addressed decreasing the Schottky barrier height (SBH) between the Ni silicide and source/drain to improve device performance by incorporating Pt or Pd [12][13][14] and rare earth (RE) metals such as ytterbium (Yb), erbium (Er), dysprosium (Dy), and terbium (Tb) [15][16][17][18][19][20][21] into the Ni silicide, which would reduce contact resistance. Similarly, their alloys could be used to lower hole and electron SBH, respectively.…”

Control of oxidation on NiSix during etching and ashing processes

“…The stability of the sheet and contact resistance on nickel silicide is an important issue. In the formation of nickel silicide, the oxidation on n + nickel silicide caused by the excessive agglomeration of NiSi and the suppression of the abnormal oxidation phenomenon by applying N 2 preamorphization implantation on the As-doped substrate or covering the surface with TiN cap during silicidation have been reported [3][4][5]. On the contrary, in the formation of contact hole, the unintended oxidation also occurred and a cleaning technology for oxide film removal on NiSi x and controlling the queue time before the metallization process was reported [6].…”