Control of oxidation on NiSix during etching and ashing processes

Effects of molecular versus atomic oxygen on NiSi and Ni(Pt)Si films grown on both p- and n-doped Si(100)

“…The broad feature with a maximum at 103-102 eV is consistent with SiO 2 , metal-silicate, and suboxide formation. 10,14 The feature near 532 eV is also consistent with SiO 2 formation, but the pronounced shoulder near 530 eV indicates the presence of a transition metal oxide in the overlayer. 14,16 Importantly, the feature near 530 eV is observed for all samples exposed to O + O 2 , and none exposed to O 2 , even for as-received samples exposed to ambient.…”

“…Other work has demonstrated that the presence of Pt retards oxide growth during both plasma and plasma-free oxidations, 2 but without information concerning the composition of the oxide or near-surface substrate and with ambiguous results regarding the effects of substrate doping on oxidation rate or thickness. Other investigators 10,11 have reported enhanced oxidation, under different oxidizing conditions, for NiSi films grown on As-doped substrates.…”

“…[1][2][3][4][5][6][7][8][9] Understanding the oxidation of these surfaces is therefore of practical and scientific importance. Several studies 5,9,10 have demonstrated that the plasma treatment of NiSi results in Ni oxidation/silicate formation. Other work has demonstrated that the presence of Pt retards oxide growth during both plasma and plasma-free oxidations, 2 but without information concerning the composition of the oxide or near-surface substrate and with ambiguous results regarding the effects of substrate doping on oxidation rate or thickness.…”

Oxidation of NiSi and Ni(Pt)Si: Molecular vs. Atomic Oxygen

“…XPS data acquired after oxidation, but without uncontrolled sample exposure to ambient, can yield considerable insight into the mechanisms of oxidation in different environments. This is in contrast to some previous studies [1,3,4,6] and permits a greater degree of control of initial surface composition, and therefore a more detailed understanding of relevant surface chemistry. This account compares only films formed on ndoped Si(100) substrates.…”

Disconnection of NiSi shared contact and its correction using NH<inf>3</inf> soak treatment in Ti/TiN barrier metallization

“…The gate shoulder of a shared contact is often damaged by fluorine during contact etching. The fluorine promotes oxidation of the NiSi [5]. Thus, the gate shoulder of the shared contact can be easily disconnected because of the oxide on the NiSi at a poor contact area.…”