A Wide-Band Fully-Integrated CMOS Ring-Oscillator PLL-Based Complex Dielectric Spectroscopy System

Elhadidy, Osama; Shakib, Sherif; Krenek, Keith; Palermo, Samuel; Entesari, Kamran

doi:10.1109/tcsi.2015.2426960

Cited by 29 publications

(13 citation statements)

References 20 publications

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“…Ring oscillator is commonly used in the process technology development to characterize the process performance [6], [8], [13], [14]. It also widely uses as clock generator, voltage controlled oscillator [15]- [18] and phase locked loop [19], [20].…”

Section: Basic Concept Of Ring Oscillatormentioning

confidence: 99%

CMOS ring oscillator delay cell performance: a comparative study

Hadi¹,

Jidin²,

Wahab³

et al. 2019

IJECE

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A common voltage-controlled oscillator (VCO) architecture used in the phase locked loop (PLL) is the ring oscillator (RO). RO consist of number of inverters cascaded together as the input of the first stage connected to the output of the last stage. It is important to design the RO to be work at desired frequency depend on application with low power consumption. This paper presents a review the performance evaluation of different delay cell topologies the implemented in the ring oscillator. The various topologies analyzed includes current starved delay cell, differential delay cell and current follower cell. Performance evaluation includes frequency range, frequency stability, phase noise and power consumption had been reviewed and comparison of different topologies has been discussed. It is observed that starved current delay cell have lower power consumption and the different of the frequency range is small as compared to other type of delay cell.

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Section: Basic Concept Of Ring Oscillatormentioning

confidence: 99%

CMOS ring oscillator delay cell performance: a comparative study

Hadi¹,

Jidin²,

Wahab³

et al. 2019

IJECE

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“…1a, implemented on the top metal of the CMOS metal stack, with a passivation opening for direct contact to the MUT [17], [19]- [22]. These sensor types provide convenient access to both terminals (P + and P − in Fig.…”

Section: A Near-field Sensormentioning

confidence: 99%

“…Oscillator-based approaches exist, which are very narrow-band, area-consuming and limited to measurement of the real part of permittivity, thus are not suitable for implementation of a broadband permittivity sensing pixel [17], [19], [22], [24]. Several other implementations achieve an operation frequency range of at least a decade by employing broadband down-conversion [18], [20], [21], [23] or wide-band PLL-based architectures [22]. However, since they are not meant for imaging applications, little optimization and analysis has been done on the readout speed, resulting in potentially long measurement times.…”

mentioning

confidence: 99%

A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies

Vlachogiannakis

Pertijs

Spirito

et al. 2018

IEEE Trans. Microwave Theory Techn.

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Abstract-A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test (MUT) sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-IF switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values and the measured relative permittivity resolution is better than 0.3 over a 0.1-10 GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15×0.3 mm 2 , allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.

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“…Although the transistor first operates in linear mode and later in saturation mode, we only use the saturation operational region for current source replacement. Equation (5) is reduced to just one expression: (6) and solving (6):…”

Section: A Cmos Invertermentioning

confidence: 99%

“…Test systems for aging monitoring [5] measure the ring oscillator frequency variation produced by the degradation during the device lifetime. Phase-locked-loops (PLL) [6] and dual delay-locked loops (DLL) [7] use ring oscillators and their multiphase internal characteristic to correct timing of high-performance digital circuits. Voltage-controlled oscillators (VCO) [8] employ current-starved transistors controlled by the gate voltage input to vary the output frequency of the ring oscillator.…”

Section: Introductionmentioning

confidence: 99%

An In-Depth Analysis of Ring Oscillators: Exploiting Their Configurable Duty-Cycle

Agustin

López‐Vallejo

2015

IEEE Trans. Circuits Syst. I

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Ring oscillators are used in many applications, but for all of them the system output is a clock signal with a 50% duty cycle. Our work sets the analytical basis for understanding and designing a ring oscillator whose outputs are clock signals with fully-configurable duty cycles different from 50%. We present two models in order to vary the output duty cycle with reduced area overhead: the first model is based on the layout design, focusing on the transistor sizing of each inverter gate; and the second model establishes a relation between the output duty cycle and different bias voltage schemes. These models are validated by simulation with a 40 nm commercial technology. The simulations include the impact of variability and the characterization of the oscillator phase noise. We also discuss the utilization of our new approach in many different applications for heterogeneous environments.

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A Wide-Band Fully-Integrated CMOS Ring-Oscillator PLL-Based Complex Dielectric Spectroscopy System

Cited by 29 publications

References 20 publications

CMOS ring oscillator delay cell performance: a comparative study

CMOS ring oscillator delay cell performance: a comparative study

A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies

An In-Depth Analysis of Ring Oscillators: Exploiting Their Configurable Duty-Cycle

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