A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

Yang, Byung‐Do

doi:10.4218/etrij.13.1912.0004

Cited by 63 publications

(36 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High-frequency RFID tags, operating at a base carrier frequency of 13.56 MHz, function at a maximum distance of 10 cm for proximity readers and up to 1 m for vicinity readers. TFT-based RFID tags can be grouped into two categories: those that communicate with specially designed RFID readers with custom protocols, like 8-, 12-or 16-bit tags [41][42][43][44][45] ; and those that communicate with commercial NFC readers, which are embedded in many smartphones and handheld devices. Chip design requirements are less stringent for the first category, as simpler protocols can be defined to account for the technology limitations of TFTs.…”

Section: Towards Vlsi (Digital) Circuits On Foilmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

View full text Add to dashboard Cite

T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel array. Such driver circuits comprise thousands of switches operating together -previously a job for silicon chips mounted around the display.Beyond displays, how far can thin-film circuits go in terms of replacing silicon complementary metal-oxide-semiconductor (CMOS) chips? Fig. 1 illustrates the key advantages of thin-film circuits on flexible substrates. The circuits can be fabricated on large substrates, thereby creating very thin, lightweight and ultra-flexible electronics 1,2 . Folding, rolling or crumpling such flexible circuits is possible without destroying the electronic functionality. Because of these properties, a flexible TFT-based microprocessor 3 (Fig. 1d) or thin-film near-field communication (NFC) tag (Fig. 1e) can, for example, be integrated imperceptibly into any object. TFT technologies also have considerable potential for fabrication on ultrathin stretchable substrates 4 that can be made porous to create breathable devices for contact with skin. With these features, thin-film integrated circuits (ICs) could be a game-changer for wearable electronics. Ultrathin, conformable ICs in the form of a tattoo could be used to monitor vital body parameters, communicating these parameters directly to a patient's smartphone or a medical database.In this Perspective, I discuss the potential of thin-film circuits on plastic substrates for the development of Internet of Things (IoT) and wearable applications. First I look at the different TFT technologies that can be realized on flexible substrates, and then discuss the impact TFT technology will have on circuit design at the level of digital logic gates and very-large-scale integration (VLSI) digital circuits. For the latter, I consider the use of thin-film ICs in the creation of low-cost radiofrequency identification (RFID) tags for everyday items. Flexible chips may initially be used to simply identify each item. Then, when the RFID chip is potentially replaced with a thinfilm NFC chip, standard smartphones and tablets equipped with NFC readers could identify objects and connect them to the cloud. Another advantage of thin-film IC technology is its potential to be combined with sensor or signage technology, thereby integrating more functionality into the objects, which is discussed in a section on analogue circuits. Finally, I will briefly examine the potential of silicon CMOS chip technology to be interfaced directly with TFT circuitry. TFT technologyThe development and optimization of transistor technologies are driven by four important figures of me...

show abstract

Section: Towards Vlsi (Digital) Circuits On Foilmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

View full text Add to dashboard Cite

show abstract

“…6 a-IGZO is considered a prime candidate for these applications due to its relatively high electron mobilities >10 cm 2 /Vs, 2 its good uniformity over large areas, its high optical transmission, above 75% over the visible range, [7][8][9] and its low processing temperatures, <200 C. 10 To demonstrate the applicability of a-IGZO, several prototype devices have already been produced, including both rigid and flexible active matrix organic light emitting diode (AMOLED) displays, [11][12][13] e-ink displays, [14][15][16] and radio frequency identification (RFID) tags. [17][18][19] The deposition of a-IGZO has been investigated through several routes, including pulsed laser deposition (PLD), 2,20 solution processing, [21][22][23] atomic layer deposition (ALD), 24 and sputtering. 8,10,21,[25][26][27][28] It is commonly found that hightemperature post-process annealing has a positive impact on device performance.…”

mentioning

confidence: 99%

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Troughton

Downs

Price

et al. 2017

Applied Physics Letters

View full text Add to dashboard Cite

The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at hightemperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption. Published by AIP Publishing.

show abstract

“…Oxide semiconductor based thin-film transistors (TFTs) offer large carrier mobilities (>10 cm

^{2}

/Vs), which enable these high frequencies, and additionally provide low off-currents and large area uniformity [8,9,10,11]. Thus, recent reports have shown that unipolar circuit technology based on oxide semiconductors can be employed for NFC and RFID applications [12,13]. However, the use of complementary metal-oxide-semiconductor (CMOS) technology could dramatically improve the power consumption, gain, noise immunity and circuit design of these systems [14].…”

Section: Introductionmentioning

confidence: 99%

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

et al. 2018

View full text Add to dashboard Cite

In this work, we show the performance improvement of p-type thin-film transistors (TFTs) with Ge2Sb2Te5 (GST) semiconductor layers on flexible polyimide substrates, achieved by downscaling of the GST thickness. Prior works on GST TFTs have typically shown poor current modulation capabilities with ON/OFF ratios ≤20 and non-saturating output characteristics. By reducing the GST thickness to 5 nm, we achieve ON/OFF ratios up to ≈300 and a channel pinch-off leading to drain current saturation. We compare the GST TFTs in their amorphous (as deposited) state and in their crystalline (annealed at 200 °C) state. The highest effective field-effect mobility of 6.7 cm2/Vs is achieved for 10-nm-thick crystalline GST TFTs, which have an ON/OFF ratio of ≈16. The highest effective field-effect mobility in amorphous GST TFTs is 0.04 cm2/Vs, which is obtained in devices with a GST thickness of 5 nm. The devices remain fully operational upon bending to a radius of 6 mm. Furthermore, we find that the TFTs with amorphous channels are more sensitive to bias stress than the ones with crystallized channels. These results show that GST semiconductors are compatible with flexible electronics technology, where high-performance p-type TFTs are strongly needed for the realization of hybrid complementary metal-oxide-semiconductor (CMOS) technology in conjunction with popular n-type oxide semiconductor materials.

show abstract

A Transparent Logic Circuit for RFID Tag in a-IGZO TFT Technology

Cited by 63 publications

References 9 publications

The development of flexible integrated circuits based on thin-film transistors

The development of flexible integrated circuits based on thin-film transistors

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Ge2Sb2Te5 p-Type Thin-Film Transistors on Flexible Plastic Foil

Contact Info

Product

Resources

About