2018
DOI: 10.1038/s41928-017-0008-6
|View full text |Cite
|
Sign up to set email alerts
|

The development of flexible integrated circuits based on thin-film transistors

Abstract: T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel arra… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

1
329
0
1

Year Published

2018
2018
2023
2023

Publication Types

Select...
6
3

Relationship

0
9

Authors

Journals

citations
Cited by 453 publications
(355 citation statements)
references
References 61 publications
1
329
0
1
Order By: Relevance
“…Considering the growth of and the prospects [15,16] for oxidebased applications, including the Internet of Things, wearable electronics, reconfigurable and/or bioinspired sys tems, the major role of TiO 2 based electronic devices, as well as the necessity for metal electrodes on top of or below their active area, we proceed by sharing some thoughts on the use fulness of our results across diverse MO applications. In the field of RRAM, where typically the devices are used after an electroforming step, Schottky barriers are considered essential for supporting resistive switching [60].…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Considering the growth of and the prospects [15,16] for oxidebased applications, including the Internet of Things, wearable electronics, reconfigurable and/or bioinspired sys tems, the major role of TiO 2 based electronic devices, as well as the necessity for metal electrodes on top of or below their active area, we proceed by sharing some thoughts on the use fulness of our results across diverse MO applications. In the field of RRAM, where typically the devices are used after an electroforming step, Schottky barriers are considered essential for supporting resistive switching [60].…”
Section: Discussionmentioning
confidence: 99%
“…These features have led to the use of MOs in a variety of applications ranging from resistive random access memories (RRAMs) [5,6] and thin film transistors (TFTs) [7,8] to oxidebased photovol taics [9] and sensors [10], introducing a new era for large area transparent/stretchable electronics [11,12] and neuromor phic systems [13,14]. It is also worth mentioning two very recently published perspective articles [15,16] …”
mentioning
confidence: 99%
“…High‐speed and low‐power thin‐film transistors (TFTs) for vertically monolithic 3D integrated circuits (3D‐ICs) and flexible circuits are essential for next‐generation electronics in the fields of displays, sensors, biodegradable electronics, and so on . GeSn alloy has aroused significant attention due to its superior mobility and lower process temperature as compared with Si and Ge .…”
Section: Comparison Of Poly‐gesn Tft Characteristics In This Work Tomentioning
confidence: 99%
“…Development of new dielectric materials for OTFTs, which perform as capacitors, insulators, and substrates, is also important to realize various electronic applications based on OTFTs. Favorable dielectric characteristics of OTFT-based electronic devices include ease of preparation, low cost, large area processibility, as well as excellent insulating properties [19][20][21][22][23].…”
Section: Introductionmentioning
confidence: 99%