A thermal performance measurement method for blind through silicon vias (TSVs) in a 300mm wafer

Supply chains for 3D IC integration manufacturing

“…It can be seen from Figures 2 to 7 that, there are many important tasks in the MEOL (solder bumping / temporary bonding / backgrinding / TSV Cu revealing / thin wafer handling / de-bonding / cleaning), assembly and test; thus the OSAT should strive to make themselves ready for a robust and high yield manufacturing process. In order to avoid finger pointing and have a smooth hand-off from the FAB to OSAT of the un-finished (blind) TSV wafers, more research and development works should be performed on the testing methods of the blind TSV wafers for electrical, for example [20,21], thermal, for example [22], and mechanical performances.…”

Recent Advances and New Trends in Nanotechnology and 3D Integration for Semiconductor Industry

“…This test vehicle can be degenerated to the case of: (a) wide I/O memory if there is not the memory-chip stacking nor the TSVs in the mechanical/thermal chips and the interposer is either an logic, microprocessor, or SoC; (b) wide I/O DRAM if there are not mechanical and thermal chips and the interposer is a logic chip; and (c) wide I/O interface if there is not the memory-chip stacking and there is not any TSV in the thermal/ mechanical chips. Thus, the core enabling technologies (such as via etching, dielectric, barrier and seed layers deposition, via filling, CMP, thin-wafer handling, electrical and thermal design and test of TSVs, wafer bumping of ultra finepitch lead-free microbumps, fluxless C2W bonding, electronmigration of microbumps, and reliability of microbump assemblies) developed [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36] with this test vehicle are very useful and can have very broad applications. surrounding Si as shown in Figure 9.…”

Thermal evaluation and analyses of 3D IC integration SiP with TSVs for network system applications

“…Thermal management is one of the critical issues of 3D IC integration [11][12][13][14][15][16][17][18][19][20][21]. This is because: (1) the heat generated by stacked multifunctional chips in miniature packages is quite high; (2) 3D IC increase the net heat flux that must be dissipated via per unit surface area of package; (3) enclosed chips in the 3D IC package may be easily overheated if the accumulated heat is not properly drained away; (4) the space between the 3D stack may be too small for cooling channels (i.e., no gap for fluid flow); and (5) thinner chips may create more extreme conditions for on-chip hot spots.…”