Recent Advances and New Trends in Nanotechnology and 3D Integration for Semiconductor Industry

Abstract

"There's Plenty of Room at the Bottom" is the title of Richard Feynman's lecture on December 29th, 1959 to the American Physical Society at California Institute of Technology (Caltech) and is generally considered to be the very first speech about nanotechnology. Some important milestones of nanotechnology will be briefly mentioned and the emphasis is placed on the applications and outlooks of nanotechnology in electronics. "Computing Machines in the Future" is the title of the Nishina Memorial Lecture at Gakushuin University in Tokyo given by the 1965 Nobel Physics Laureate, Richard Feynman on August 9th, 1985. During the lecture, Feynman not only told us to go for 3D integration, but also taught us how to do it! In this study, 3D integration will be the focus and the emphasis is placed on 3D IC integration and their recent advances and new trends. 3D Si integration will be briefly discussed

AI-guided OCD metrology for single HAR sub-micron via measurement

“…3-D IC uses a layer-by-layer stacking architecture to integrate components into a smaller volume. It has the advantages of smaller size and better performance [1][2][3][4], so it is considered an effective way to overcome the limitations of Moore's Law. At the same time, due to the stacking of layers, many vertical connection channels are added, which makes the measurement operation in the manufacturing process more difficult.…”

Establishment and validation of an electron inelastic mean free path database for narrow bandgap inorganic compounds with a machine learning approach

“…Narrow bandgap inorganic compounds, especially semiconductors are frequently used nowadays in nano electronic devices. [1][2][3] In studying these materials, the inelastic mean free path (IMFP) 4 is one of the fundamental descriptors for surface analysis techniques based on electron scattering. The IMFP describes the mean distance that an electron travels through a solid before losing energy and plays a critical role in experimental observation facilities, such as reflection electron energy-loss spectroscopy (REELS), [5][6][7][8][9][10][11][12][13] X-ray photoelectron spectroscopy (XPS), [14][15][16] and Auger electron spectroscopy (AES).…”

Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development

“…The dual damascene Cu plating technology has evolved to also meet the challenges of through‐Si‐vias (TSVs) to enable the fabrication of 3D ICs . Unlike VLSI circuits where the electroplated Cu was used to connect metal layers on different planes of the device, in 3D ICs the Cu TSVs extend through Si wafers and provide a conductive path between layers of the ICs.…”