Articles you may be interested inHydrogen implantation-induced layer transfer of silicon using direct wafer bonding AIP Conf. Proc. 1512, 690 (2013); 10.1063/1.4791225Effects of hydrogen implantation temperature on ion-cut of silicon

The onset of surface blistering in hydrogen-implanted single crystalline silicon was studied. A combination of atomic force microscopy and optical measurements shows that hydrogen-containing platelets grow laterally below silicon surface until they suddenly pop up as surface blisters due to the internal hydrogen pressure after a critical size has been reached. Experimentally and theoretically, the critical size of the onset blisters was found to increase with increasing implantation depth or top layer thickness.

The effect of preamorphization implantation (PAI) on boron activation in germanium was studied. It was found that following PAI, significant dynamic annealing occurred during boron implantation in germanium. For small PAI energy which leads to a thin amorphous layer, recrystallization is completed via dynamic annealing during the boron implantation. As a result, a high-temperature postimplant anneal is required to activate the remaining interstitial boron and to annihilate implantation defects. For high PAI energy, while the thick amorphous layer did not recrystallize during the dynamic annealing, it requires a high-temperature anneal in order to completely recrystallize by solid phase epitaxial regrowth (SPER). The optimized PAI energy needs to be tailored such that the surface amorphous layer not only survives dynamic annealing during boron implantation, but also completes the SPER within the designed thermal budget. Full activation of boron can then be achieved without being limited by its solid solubility in germanium. An electrically active boron concentration as high as 4.7×1020∕cm3 was obtained after 400°C rapid thermal annealing. PAI causes a similar effect in GeOI substrates.

Semiconductor wafer bonding has increasingly become a technology of choice for materials integration in microelectronics, optoelectronics, and microelectromechanical systems. The present overview concentrates on some basic issues associated with wafer bonding such as the reactions at the bonding interface during hydrophobic and hydrophilic wafer bonding, as well as during ultrahigh vacuum bonding. Mechanisms of hydrogen-implantation induced layer splitting ͑''smart-cut'' and ''smarter-cut'' approaches͒ are also considered. Finally, recent developments in the area of so-called ''compliant universal substrates'' based on twist wafer bonding are discussed.

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