Onset of blistering in hydrogen-implanted silicon

Huang, Lixiao; Tong, Qiaoling; Chao, Yu-Lin; Lee, T.-H.; Martini, T.; Gösele, U.

doi:10.1063/1.123430

Cited by 57 publications

(41 citation statements)

References 8 publications

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“…[15] It was found that in order for LaAlO 3 (100) to achieve blistering and layer splitting with an H 2 + dose of 3.5±5.0´10 16 /cm 2 H implantation must be performed on a wafer in the temperature range~450 tõ 550 C. For the LaAlO 3 samples that were implanted by H 2 + at 450 C at an H 2 dose of 5´10 16 /cm 2 at 160 keV the blistering time as a function of annealing temperature is given in Figure 14. Again, an Arrhenius relation is observed and the activation energy is about 1.7 eV.…”

Section: Laalo 3 Layer Transfermentioning

confidence: 97%

Wafer Bonding and Layer Splitting for Microsystems

Tong¹,

1999

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In advanced microsystems various types of devices (metal-oxide semiconductor field-effect transistors, bipolar transistors, sensors, actuators, microelectromechanical systems, lasers) may be on the same chip, some of which are 3D structures in nature. Therefore, not only materials combinations (integrated materials) are required for optimal device performance of each type but also process technologies for 3D device fabrication are essential. Wafer bonding and layer transfer are two of the fundamental technologies for the fabrication of advanced microsystems. In this review, the generic nature of both wafer bonding and hydrogen-implantation-induced layer splitting are discussed. The basic processes underlying wafer bonding and the layer splitting process are presented. Examples of bonding and layer splitting of bare or processed semiconductor and oxide wafers are described.

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Section: Laalo 3 Layer Transfermentioning

confidence: 97%

Wafer Bonding and Layer Splitting for Microsystems

Tong¹,

1999

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“…13 This mechanism, driven by increases in the partial pressure of hydrogen and helium in cavities and microvoids combined with the elastic energy of the solid in the vicinity of cracks, is similar to the layer transfer mechanism which has now been widely observed in semiconductor materials. 14 Figure 1(a) is a polarized-optical micrograph illustrating the domain structure of a transferred BaTiO 3 layer on a Pt-coated substrate. The domain structure in the film is seen to be strikingly similar to that of the unimplanted bulk BaTiO 3 crystal.…”

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confidence: 99%

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Park

Ruglovsky

Atwater

2004

Applied Physics Letters

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Single crystal BaTiO 3 thin films have been transferred onto Pt-coated and Si 3 N 4 -coated substrates by the ion implantation-induced layer transfer method using H + and He + ion coimplantation and subsequent annealing. The transferred BaTiO 3 films are single crystalline with root mean square roughness of 17 nm. Polarized optical and piezoresponse force microscopy (PFM) indicate that the BaTiO 3 film domain structure closely resembles that of bulk tetragonal BaTiO 3 and atomic force microscopy shows a 90°a -c domain structure with a tetragonal angle of 0.5°-0.6°. Micro-Raman spectroscopy indicates that the local mode intensity is degraded in implanted BaTiO 3 but recovers during anneals above the Curie temperature. 1,2 In most cases, these ferroelectric thin films have a polycrystalline microstructure that degrades the piezoelectric coefficients, saturation polarization, and charge retention and causes time-dependent fatigue problems.A number of film deposition methods have been studied to fabricate high quality ferroelectric oxides. Metalorganic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), pulsed laser deposition (PLD) and sol-gel synthesis processes have been used for heteroepitaxial growth of ferroelectric thin films on various substrates.3-6 However, in spite of many efforts to realize epitaxial growth on various lattice mismatched substrates, deposited thin films rarely exhibit properties comparable to those of bulk single crystals.Layer transfer is one of the most promising methods by which to realize single crystal properties in thin films and to overcome substrate-film lattice mismatch effects. Crystal ion slicing (CIS) processes have been reported for layer transfer of silicon, InP, Ge and diamond. 7,8 Recently, layer splitting and transfer of ferroelectric materials such as LiNbO 3 , LiTaO 3 , KTaO 3 , SrTiO 3 , and BaTiO 3 by sacrificial wet etching and anodic bonding methods combined with the CIS method have also been reported. 9,10 To date, characterization of both the microstructure and ferroelectric properties of transferred ferroelectric thin films as well as the principal role of the implanted gas species have not been extensively reported. Single crystal ferroelectric thin films can be used in applications such as actuator devices, monolithically integrated optical waveguides on Si-based microelectronics devices 17 /cm 2 , and 30-115 keV He + ion was subsequently implanted with a dose in the range of 5 ϫ 10 16 -1ϫ 10 17 /cm 2 . Implantation was performed at −25°C to prevent the formation of cavities during implantation. The root mean square (rms) roughness of the surface was 2.0 nm for unimplanted bulk BaTiO 3 and 2.0-3.0 nm for as-implanted BaTiO 3 . The substrates used for layer transfer were 50 nm thick low pressure CVD (LPCVD) grown Si 3 N 4 / n-Si with a surface roughness of 0.5-0.8 nm and 200 nm thick sputter-deposited Pt films on 50 nm Si 3 N 4 / Si with a surface roughness of 3.0 nm.After the implantation step, both BaTiO 3 and the substrates were cleaned by dipp...

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“…Microcracks can occur within the platelet when trapped H 2 gas becomes pressurized at higher temperatures. This cracking expands by growth or coalescence with other microcracks up to a critical size where physical separation occurs within the lattice [6]. Figure 1 shows a simplified drawing of a platelet containing a gas inclusion.…”

Section: Results and Discussion; Process Optimization In Simentioning

confidence: 99%

Optimization of the Ion-Cut Process in Si and SiC

2000

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H + -implantation is the basis for an ion-cut process, which combines hydrophilic wafer bonding, to produce heterostructures over a wide range of materials. This process has been successfully applied in Si to produce a commercial silicon-on-insulator material. The efficacy of implantation to produce thin-film separation was studied by investigation of H + -induced exfoliation in Si and SiC. Experiments were done to isolate the effects of the hydrogen chemistry from that of implant damage. Damage is manipulated independently of H + dosage by a variety of techniques ranging from elevated temperature irradiation to a two-step implantation scheme in Si, and the use of channeled-ion implantation in SiC. The results will demonstrate that such schemes can significantly reduce the critical dose for exfoliation.

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Onset of blistering in hydrogen-implanted silicon

Cited by 57 publications

References 8 publications

Wafer Bonding and Layer Splitting for Microsystems

Wafer Bonding and Layer Splitting for Microsystems

Microstructure and properties of single crystal BaTiO3 thin films synthesized by ion implantation-induced layer transfer

Optimization of the Ion-Cut Process in Si and SiC

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