A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltage

Terada, Kazuo; Sumida, M.

doi:10.1109/icmts.2002.1193172

Cited by 9 publications

(4 citation statements)

References 2 publications

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“…By observing how varies as a function of , it is possible to get a first-order approximation for both and distributions. A relationship between the distribution statistics (4) for the parameters in (4) can be established from the first and second moments as given in (5) and (6), respectively…”

Section: Measurements Resultsmentioning

confidence: 99%

“…In addition, ring oscillators are typically not well suited to extract the second moment or variance of distributions that is required to more fully understand the impact variability will have on the design. A test circuit for quickly obtaining distribution statistics on MOSFET channel conductance and threshold voltages has been proposed using two dc measurements [4]- [6]. Although the technique is fast, possible variations across the (device under test) DUTs in the matrix can be incorrectly interpreted as threshold voltage variations.…”

Section: Introductionmentioning

confidence: 99%

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Technique for the Rapid Characterization of Parametric Distributions

Hayes

Agarwal

Nassif

2009

IEEE Trans. Semicond. Manufact.

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We present a technique for fast characterization of the statistical mean and sigma of parametric variations. The technique uses a scan chain to sequentially cycle through a device array, creating a periodic waveform that can be directly measured using a multimeter. The dc and root-mean square values of the waveform directly give the mean and sigma of the parameter distribution. We show the technique is sufficiently general and can be applied to a wide range of characterization strategies. A V TH characterization array was implemented in a 65-nm bulk CMOS process where we compare traditional individual device measurements for calculating statistics with the direct mean and sigma measurement technique using the multimeter.

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Section: Measurements Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Technique for the Rapid Characterization of Parametric Distributions

Hayes

Agarwal

Nassif

2009

IEEE Trans. Semicond. Manufact.

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“…The test circuits for V th evaluation are reported in the literature. 6,[24][25][26][27][28][29] As described in previous works, the use of these test circuits is useful, for example, to clarify the origin of the variability, and to understand its impact on the circuit operation. It is clear that these test circuits are beneficial tools for the evaluation of the variability and noise of MOSFETs.…”

Section: Introductionmentioning

confidence: 99%

Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

Kumagai

Abe

Fujisawa

et al. 2011

Jpn. J. Appl. Phys.

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To develop a new process technology for suppressing the variability and noise in metal–oxide–semiconductor field-effect transistors (MOSFETs) for large-scale integrated circuits, accurate and rapid measurement test circuits for the evaluation of a large number of MOSFET electrical characteristics were developed. These test circuits contain current-to-voltage conversion circuits and simple scanning circuits in order to achieve rapid and accurate evaluation for a wide range of measurement currents. The test circuits were fabricated and the variabilities and noises in drain–source current, gate leakage current, and p–n junction leakage current were evaluated using a large-scale test circuit.

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“…(2) DSwhere K is gain constant including the above-mentioned other factors, namely, channel length, channel width, mobility and gate oxide thickness [l]. However, it is considered that the fluctuation of the factors in K little affects the CVTH value, because its effect on the IDS-fluctuation is very small compared with the Vp-fluctuation in the subthreshold region [5]. Actually, since CWH for W/L = 7.512.1 p n MOSFET is less than 2 mV, it is considered that the fluctuation of gate oxide thickness and mobility are very small.…”

Section: Test Chipmentioning

confidence: 99%

Further study of V/sub TH/-mismatch evaluation circuit

Terada

Fukeda

Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516)

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A new test chip is developed for further studying the test circuit, with which the MOSFET threshold-voltage (VTH) mismatch can easily be evaluated and which is proposed in the previous ICMTS. The data obtained from the test circuits having different design channel width, design channel length, MOSFET number and channel conductivity show reasonable dependency of the VTH-mismatch on those parameters.

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A test circuit for measuring standard deviations of MOSFET channel conductance and threshold voltage

Cited by 9 publications

References 2 publications

Technique for the Rapid Characterization of Parametric Distributions

Technique for the Rapid Characterization of Parametric Distributions

Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

Further study of V/sub TH/-mismatch evaluation circuit

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