A Source of Elemental Iodine for Vapor Transport Studies

Blum, S. E.

doi:10.1149/1.2426673

J. Electrochem. Soc.

1967

DOI: 10.1149/1.2426673

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A Source of Elemental Iodine for Vapor Transport Studies

S. E. Blum¹

Abstract: not Available.

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1968

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Cited by 2 publications

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Electrical and Optical Properties of Vapor-Grown GaP

Taylor

Woods

Lorenz

1968

Journal of Applied Physics

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GaP, both undoped and Se- or S-doped, has been vapor deposited onto the polar 111A (Ga face) and 111B (P or As face) surfaces of GaAs and GaP substrates by means of a PCl3 chemical-transport method. Hall measurements carried out on the crystals over the temperature range of 77°–500°K and optical spectra taken on as-grown and zinc-diffused samples show a pronounced substrate orientation and substrate material effect. Samples grown on GaAs substrates are less uniform than those grown on GaP, and show both a carrier concentration gradient and arsenic contamination. Samples grown on GaP substrates have given electron mobilities as high as 187 cm2/V·sec at room temperature going to 2130 cm2/V·sec at liquidnitrogen temperature. The residual impurity in undoped crystals grown on 111B substrates is shown to be sulfur at a concentration of 2−3×1016 cm−3. Undoped crystals grown on 111A substrates are high-resistivity p type. Both optical studies and electrical measurements show compensation in the n-type crystals to be of the order of 10%.

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Electrical and Optical Properties of Vapor-Grown GaP

Taylor

Woods

Lorenz

1968

Journal of Applied Physics

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AN EPR STUDY OF THE EFFECT OF SUBSTRATE ORIENTATION ON VAPOR-GROWN GaP

Taylor¹,

Title²

1967

Applied Physics Letters

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A Source of Elemental Iodine for Vapor Transport Studies

Abstract: not Available.

Cited by 2 publications

References 7 publications

Electrical and Optical Properties of Vapor-Grown GaP

Electrical and Optical Properties of Vapor-Grown GaP

AN EPR STUDY OF THE EFFECT OF SUBSTRATE ORIENTATION ON VAPOR-GROWN GaP

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