AN EPR STUDY OF THE EFFECT OF SUBSTRATE ORIENTATION ON VAPOR-GROWN GaP

Abstract

The results of EPR and resistivity measurements on vapor-grown GaP are discussed. The study shows that the appearance of Fe3+ EPR signals and the resistivity values are dependent on substrate orientation. A model based on the formation of Ga vacancies during growth is proposed to account for the observations.

Behavior of Te in Vapor-Grown GaP

“…The filling in process 77~ mobility values, which peak at a Te concentration of 1 x 10 iv cm -~ and fall off at lower concentrations. We have previously speculated (7) .that this compensation is due to a Ga vacancy deep acceptor (triply ionized) at a concentration of about 1 x 10 TM cm -3 which is introduced into ( l l l ) A growths to alleviate surface strain. Other investigators (6,8) have calculated that a deep acceptor is present in ( l l l ) A growths at a level of 0.85 eV above the valence band, but they have failed to identify it.…”

Electron paramagnetic resonance in AIIIBV compounds

“…The measurements of the resonance intensity yield not only the Fermi-level location in the forbidden energy gap but also the total concentration of impurities in the samples. On the basis of these measurements, for instance, Taylor and Title [61] showed that the gallium vacancies are more effectively introduced through a (111A) surface than through a (111B) one during high-temperature annealing of gallium phosphide crystals.…”