Radiative complex formation in vapor phase epitaxial GaP

Blom, G. M.; Bhargava, R. N.

doi:10.1016/0022-0248(72)90229-1

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Microscopical C L and Ebic Analysis1

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1976

1983

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Cited by 7 publications

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“…Part of this zinc may form Zn-0 centers with the pre-existing oxygen leading to the increase of the Zn-0 luminescence in the EL spectrum. The formation of Zn-0 centers has been attributed to the capture of interstitial zinc (Zni) into the gallium vacancy VGa of a VG,-O, complex [15], which suggests that also here interstitial zinc is involved.…”

Section: Microscopical C L and Ebic Analysismentioning

confidence: 99%

On the degradation of electroluminescence efficiency in gallium phosphide green light emitting diodes

Löhnert¹,

Kubalek²

1983

Phys. Stat. Sol. (a)

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The degradation behaviour of GaP: N: Zn LED's is studied using spatially resolved cathodoluminescence and electron beam induced current measurements in addition to macroscopic device characterization. The degradation is caused by a decrease of the luminescence quantum efficiency in the n‐region of the device and saturates at a non‐zero value of the electroluminescence efficiency. The injection efficiency at typical operating currents does not decrease. During degradation interstitial zinc is found to diffuse from the p‐ into the n‐region. A model in which the decrease of the quantum efficiency in the n‐region is attributed to enhanced non‐radiative recombination associated with the interstitial zinc diffused in, enables quantitative fits of the measured degradation data.

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Section: Microscopical C L and Ebic Analysismentioning

confidence: 99%