A Snapback-Free Fast-Switching SOI LIGBT With Polysilicon Regulative Resistance and Trench Cathode

Huang, Linhua; Luo, Xiaorong; Wei, Jie; Zhou, Kun; Deng, Gaoqiang; Sun, Tao; Ouyang, Dongfa; Fan, Diao; Zhang, Bo

doi:10.1109/ted.2017.2726080

Cited by 22 publications

(7 citation statements)

References 11 publications

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“…In Fig. 6 (b), the snapback is suppressed with the decrease of the N-channel widths t1, t2, and t3 because the R ' SA is increased effectively according to the equation (3), and the snapback is completely eliminated according to the equation (4). Fig.…”

Section: Device Structure and Mechanismmentioning

confidence: 98%

“…2(a) are formed between the N-buffer/P-Plugs junctions at unipolar mode, and the N-buffer is fully depleted by the MCP, thus the R ' SA is increased according to the equation (3). Consequently, the snapback is completely eliminated according to the equation (4). A, B, C, D, E, F, G, and H are shown in Fig.…”

Section: Device Structure and Mechanismmentioning

confidence: 99%

“…Lateral Insulated Gate Bipolar Transistor (LIGBT) is a promising power device, which is widely applied in High Voltage ICs (HVIC) [1][2][3][4]. Here, the tradeoff relationship between forward voltage drop (Von) and turn-off loss (Eoff) limits the development of LIGBTs [5][6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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A novel snapback-free and fast-switching Shorted-Anode Lateral Insulated Gate Transistor (SA LIGBT) with Multiple Current P-Plugs (MCP) in anode, named MCP LIGBT, is proposed and investigated. The device features Multiple separated Current P-Plugs which are inserted in the N-buffer. At the forward conduction mode, the MCP act as the potential barrier to block the electrons flowing directly to the N+ anode, and the N-channels sandwiched between the MCP are fully depleted, which both increase the anode distributed resistance (RSA). In the turn off process, the N-channels provide three high-speed paths for minorities extraction, which reduces the turn off time. Consequently, the proposed device not only eliminates the snapback effect, but also achieves superior tradeoff between Eoff and Von. At the same

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Section: Device Structure and Mechanismmentioning

confidence: 98%

Section: Device Structure and Mechanismmentioning

confidence: 99%

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A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

Chen

Huang

et al. 2024

IEEE J. Electron Devices Soc.

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“…Lateral insulated gate bipolar transistor (LIGBT) is mainly used for the integration of power devices with control circuitry. Silicon-on-insulator (SOI) LIGBTs act as an important component in power integrate circuits due to its property of superior isolation, low leakage current and high current capacity [1]- [9]. However, the switching of the LIGBT device is associated with the removal of the stored charges in the N-base region and thus causing a high switching loss.…”

Section: Introductionmentioning

confidence: 99%

A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

Tian

Zhang

Guo

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, we propose a new low turn-off loss silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) with buried variation of lateral doping (VLD) layer. The proposed device features a VLD layer inserted in the drift region, which increases the doping dose (Q) and gradient (G) compared with Uniform P-buried (UPB) SOI LIGBT. The larger capacitance effect induced by lager Q and faster depletion leads to the lower rising anode voltage and reduced storage charge in the drift region. Therefore, a considerable low turn-off loss (E off) can be obtained. It is worth to note that owing to reshaped electric field in the new structure, the excess carriers of the drift region could be removed more quickly. Furthermore, larger G of the VLD layer improves the tradeoff between breakdown voltage and turn-off loss. The results of 2-D simulation indicate that the E off of the proposed device can reduce by 29.4% and 69.7% at 100 A•cm −2 and 200 A•cm −2 , respectively, when compared with UPB SOI LIGBT. INDEX TERMS Variation of lateral doping (VLD), lateral insulated gate bipolar transistor (LIGBT), linear doping, turn-off loss, silicon-on-insulator (SOI).

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“…However, a negative differential resistance (NDR) phenomenon is introduced in the on-state since the P+ anode and the N+ anode are shorted. Committed to alleviating the phenomenon of NDR, different optimization structures have been proposed [8][9][10][11]. Among them, the LIGBTs with insulated trench collector have been proposed, which suppress but have not completely eliminated the NDR effect [8,9].…”

Section: Introductionmentioning

confidence: 99%

Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

Zhang¹,

Kong²,

Yi³

et al. 2019

Semicond. Sci. Technol.

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A snapback-free and low turn-off loss silicon on insulator LIGBT with reverse-conducting capability (RC-LIGBT) is proposed and investigated in this paper. By employing P-type polysilicon (P-poly) double trench gates at the anode region of the proposed device (DTA-LIGBT), the n-drift region located between the P-type double trench gates (DPL region) is fully depleted because of the work function difference between the P-poly and the DPL region. Thus the resistance between the shorted N+ anode and the N-buffer is significantly increased, which effectively eliminates the snapback phenomenon. The simulation results reveal that the proposed structure completely eliminates the snapback effect with the reverse conducting voltage of 1.05 and 1.25 V at J = 100 and 400 A cm −2 , respectively. In addition, the LDMOS is automatically turned on when the device is operating at high voltage, which improves the immunity of latch-up and the short-circuit capability of the device. Simultaneously, the turn-off time of the proposed structure and the turn-off loss are reduced creased by 53.5% and 53% compared with that of the separated shorted-anode LIGBT (SSA-LIGBT), respectively. Moreover, the short-circuit time of the DTA-LIGBT (p) is increased by 186% compared with the SSA-LIGBT.

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A Snapback-Free Fast-Switching SOI LIGBT With Polysilicon Regulative Resistance and Trench Cathode

Cited by 22 publications

References 11 publications

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

A Snapback-Free and Fast-Switching Shorted-Anode LIGBT With Multiple Current P-Plugs

A New Low Turn-Off Loss SOI Lateral Insulated Gate Bipolar Transistor With Buried Variation of Lateral Doping Layer

Simulation study on a novel snapback-free and low turn-off loss reverse-conducting SOI-LIGBT with P-type double trench gates on the anode region

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