A single-chip 900-MHz spread-spectrum wireless transceiver in 1-μm CMOS. II. Receiver design

Concurrent multiband low-noise amplifiers-theory, design, and applications

“…Meyer et al reported one of the early LNAs made on a low-resistivity (i.e., lossy) silicon substrate using bipolar junction transistors for commercial cellular applications [17], where very low NF is not needed. Recently, a large number of efforts have been reported to use the advanced digital CMOS processes for single-chip implementation of the complete radio transceiver [18], [19]. Significant progress in CMOS LNA design has been made during the last several years where more recent results, such as [20], demonstrate significant improvements over the earlier works [21]- [23] and show that CMOS LNAs can be a worthy competitor for compound semiconductor implementations in many portable applications.…”

Analysis and design of common‐gate low‐noise amplifier for wideband applications

“…The minimum NF of a CG LNA with values 2 3 , 1, and 3 2 is shown in Figure 15 as a function of Q L Z rel . It is crucial to have both a high inductor Q-value and large source impedance value to minimize the NF.…”

“…The assumption is valid if the drain-to-source resistor r ds is much larger than the load resistance at the drain. Otherwise, the formula should be modified to [3] …”

“…However, LNAs have a perfect input match only in a specific frequency area. Therefore, for wideband LNAs having several 100 MHz or over 1 GHz BW, a more suitable merit is the insertion gain A i defined as a ratio of the output signal voltage to half of the voltage of the source driving the LNA input [3], i.e.…”

“…Common-gate (CG) LNA is a widely used topology in wireless communications [1][2][3][4][5][6][7][8][9][10][11]. The main drawback of the CG LNA is the minimum noise figure (NF), which is typically more than 3 dB.…”