A review of hot-carrier degradation mechanisms in MOSFETs

Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

“…They become highly energized and should be accelerated away from their normal directional flow. These highly energized electrons may create interface states by breaking silicon bonds [19] or be injected into generated surface traps (hot electron injection) at interface between gate oxide and N À LDD overlap area beneath SiO 2 layer. The trapped electrons reduce the electric charge density and therefore the total charge in the area affected by the trapped carriers.…”

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

“…This is due to the bombardment by carriers which have gained sufficiently high energy and are thus called ''hot" carriers (see [1] and references therein). These interface states, characterized by a density N it , are able to capture charge carriers and, hence, become charged.…”

Performance characteristics of p-channel FinFETs with varied Si-fin extension lengths for source and drain contacts

“…5. Basically, the doping dosage at the S/D extension zone (P SDE ) is less than the S/D implant (P + ) around one tenth, compared with the lightly-doped drain implant (P − ) before 110 nm node process (normally, P + /P − > 10) to reduce the hot-carrier effect (HCE) [19][20][21][22]. Owing to this effort, the series resistance in channel is decreased and the ON current is possibly increased.…”