Abstract:The length of Source/Drain (S/D) extension (L SDE ) of nano-node p-channel FinFETs (pFinFETs) on SOI wafer influencing the device performance is exposed, especially in drive current and gate/S/D leakage. In observation, the longer L SDE pFinFET provides a larger series resistance and degrades the drive current (I DS ), but the isolation capability between the S/D contacts and the gate electrode is increased. The shorter L SDE plus the shorter channel length demonstrates a higher trans-conductance (Gm) contribu… Show more
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