Study of RF N− LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF

Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

“…The test bench [11] is based on a central unit that can test several devices simultaneously. It consists in a computer driving control and data-recording peripherals (power supplies, triggers, memories).…”

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

“…The test bench [5] is based on a central unit which can test several devices simultaneously. It consists in a computer driving control and data-recording peripherals (power supplies, triggers, memories).…”

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests

“…In other words, the drain-source voltage increases the electric field below the gate towards the trench LDD region and near the oxide layer, therefore enhancing the trapping process. So the degradation rate is accelerated [15,19,20]. This means that the tracking of these parameters enables to consider the hot carrier injection as dominant degradation phenomenon in spite of the power efficiency improvement.…”