Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

Fonder, Jean Baptiste; Latry, Olivier; Duperrier, Cédric; Stanislawiak, Michel; Maanane, Hichame; Eudeline, Philippe; Temçamani, Farid

doi:10.1016/j.microrel.2012.04.024

Cited by 12 publications

(7 citation statements)

References 21 publications

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“…It means that there are, in fact, two coupled phenomena: a reversible one induced by trapped charges and an irreversible one related to physical degradations. All these electrical results are well detailed in [10]. The mechanism is illustrated in Fig.…”

Section: Electrical Resultsmentioning

confidence: 59%

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Fonder

Chevalier

Genevois

et al. 2012

Microelectronics Reliability

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Section: Electrical Resultsmentioning

confidence: 59%

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Fonder

Chevalier

Genevois

et al. 2012

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 81%

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Fonder

Latry

Temçamani

et al. 2014

2014 International Conference on Multimedia Computing and Systems (ICMCS)

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This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatial cartography of HEMT channel temperature. By applying these methods to life test and coupling it to physical investigations, we demonstrate that degradations in aged transistors are mainly related to channel temperature.

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“…The AlGaN/GaN heterostructure has to deal with defects coming from the material properties and fabrication process. As a result, many researches have been conducted to evaluate and enhance the device reliability in working conditions as close as possible to the final application [10]- [16].…”

Section: The Algan/gan Heterostructure Has To Deal With Defectsmentioning

confidence: 99%

“…This paper identifies the main parameters affecting the reliability and irreversible degradations (reversible effects are investigated in [10]) of a radiofrequency power amplifier implemented in this technology. According to our experiments, the critical parameters affecting device reliability are the electrical constraints related to high voltage and current operation and thermal constraints related to transistor selfheating effects.…”

Section: The Algan/gan Heterostructure Has To Deal With Defectsmentioning

confidence: 99%

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

Temçamani¹,

Fonder²,

Latry³

et al. 2016

IEEE Trans. Microwave Theory Techn.

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Failure mechanisms in AlGaN/GaN HEMT RF power amplifiers implemented on silicon substrate and envisaging radar operating conditions are investigated in this paper. Several power amplifier prototypes have been designed, fabricated, characterized, and tested. Ageing tests were performed in conditions as close as possible to real applications. Ageing under increased drain voltage allowed studying both thermal and electrical aspects. Characterization performed before and after ageing tests proved that ageing process is mainly due to thermal stress for the irreversible part and to trapping effects for the reversible one, respectively. This was confirmed by additional physical analysis, the results revealing strong changes of the Schottky contact. Photons emission microscopy associated with X radiography gives spatial correlation between gate degradation and evolution of the brazing interface between the transistor chip and its packaging. It also illustrates the appearance of overheating points and acceleration of the Schottky contact degradation.

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Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life

Cited by 12 publications

References 21 publications

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test

Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization

Electrical and Physical Analysis of Thermal Degradations of AlGaN/GaN HEMT Under Radar-Type Operating Life

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