A low voltage MOSFET-only voltage reference using body effect and subthreshold operation is proposed in this paper', A temperature coefficient of5 ppm/ 'Cfrom -55 'C to 90 'C is achieved as the combined effects of: 1) a suppression of the temperature dependence of mobility; 2) a piecewise compensation of the temperature dependence of subthreshold slope parameter during the second half of temperature range. The voltage reference is designed in SMIC 0.13um CMOS process. It is able to operate at power supply voltage down to 760mV and consumes a supply current ofless than 1pA at 90 'C.