A physics-based electron gate current model for fully depleted SOI MOSFETs

New Compact and Time-Efficient Reliability Physics Model for p-Type Metal–Oxide–Semiconductor Field-Effect Transistors

“…T 00 D , T 00 FN , and T 00 TI are, respectively, the direct tunneling, Fowler-Nordheim tunneling, and thermionic emission rates and are defined in ref. 9. Once an electron crosses the interface, it must not suffer any collisions in the oxide.…”

“…Having been combined with the mechanism of drain avalanche hot-carrier injection 1) (DAHCI), a novel lucky-electron gate current model, modified from the conventional lucky-electron model 7) to include Fowler-Nordheim tunneling (FNT) and direct tunneling (DT) gate current components, is created for SC, BC, and SOI pMOSFETs, in conjunction with our previous works. 9,10) The local and nonlocal channel electron temperatures, and channel electric field can be analytically calculated. The calculated hot-carrier-induced oxide-trapping-charge density will be inserted into the damaged SC, BC, and SOI pMOSFET model to calculate the post-stress drain current.…”

Electron Substrate and Gate Current Modeling for Single-Drain Buried-Channel p-Type Metal–Oxide–Semiconductor Field-Effect Transistors Including Tunneling Mechanisms

“…To calculate the electron substrate and gate currents, we first calculate the drain current I DS , free carrier charge density, and channel electric field using a published model, 11) and electron temperature using the method described in our previous work. 8) Figure 3 shows the modeled and experimental 10) output characteristics of a BC pMOSFET with L ¼ 1:2 mm, t ox ¼ 30 nm, and substrate doping of 4 Â 10 16 cm À3 . The figure indicates good agreement between experimental data and modeled results.…”

“…Having been combined with DAHCI, a novel lucky electron gate current model, modified from the conventional lucky electron model to include Fowler-Nordheim tunneling (FNT) and direct tunneling (DT) gate current components, is created for SD BC pMOSFETs, in conjunction with our previous works. 8,9) The local and nonlocal channel electron temperatures, and channel electric field can be analytically calculated. This work forms a pseudo-two-dimensional, nonlocal, and time-efficient electron substrate and gate current model, and provides physical insights into the electron substrate and gate currents.…”

“…8) P ox is the probability that electrons can arrive at the gate electrode from the Si/SiO 2 interface. By extending the Wentzel-Kramers-Brillouin (WKB) approximation for the two different band-bending cases, the probability for P ox is summarized asP ox ðE ox > 0Þ ¼ T 00 D ðE; B ÞP 4 0 < E B À V ox T 00 FN ðE; B ÞP 4 B À V ox < E B…”