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An attempt has been made to give a detailed review of strained silicon technology. Various device models have been studied that consider the effect of strain on the devices, and comparisons have been drawn. A review of some modeling issues in strained silicon technology has also been outlined. The review indicates that this technology is very much required in nanoscale MOSFETs due to its several potential benefits, and there is a strong need for an analytical model which describes the complete physics of the strain technology.

A semi analytical model describing the bulk mobility for electrons in strained-Si layers as a function of applied uniaxial strain applied at the gate has been developed in this paper. The uniaxial stress has been applied through the silicon nitride cap layer. The effects of uniaxial stress are understood on all the three components of mobility i.e. phonon, columbic and surface roughness mobility. The results show that the electron mobility is a strong rising function of applied uniaxial strain. Flatband voltage, Depletion Charge density, Inversion charge density, Energy gap and Effective surface electrical field have been analytically modeled. There is a sharp increase in the vertical electrical field and inversion charge density and decrease in the energy gap, depletion charge density and the flatband voltage when the uniaxial stress is applied. The electron mobility results have also been compared with the experimentally reported results and show good agreement.

Abstract-Modeling is essential to simulate the operation of integrated circuit (IC) before its fabrication. Seeing a large number of Metal-Oxide-Silicon FieldEffect-Transistor (MOSFET) models available, it has become important to understand them and compare them for their pros and cons. The task becomes equally difficult when the complexity of these models becomes very high. The paper reviews the mainstream models with their physical relevance and their comparisons. Major short-channel and quantum effects in the models are outlined. Emphasis is set upon the latest compact models like BSIM, MOS Models 9/11, EKV, SP etc. Index Terms-MOS models, quantum mechanical effects, BSIM

In this paper, a review of Cu/low-k, carbon nanotube (CNT), graphene nanoribbon (GNR) and optical based interconnect technologies has been done. Interconnect models, challenges and solutions have also been discussed. Of all the four technologies, CNT interconnects satisfy most of the challenges and they are most suited for nanometer scale technologies, despite some minor drawbacks. It is concluded that beyond 32 nm technology, a paradigm shift in the interconnect material is required as Cu/low-k interconnects are approaching fundamental limits.

This paper describes an analytical model for bulk electron mobility in strained-Si layers as a function of strain. Phonon scattering, columbic scattering and surface roughness scattering are included to analyze the full mobility model. Analytical explicit calculations of all of the parameters to accurately estimate the electron mobility have been made. The results predict an increase in the electron mobility with the application of biaxial strain as also predicted from the basic theory of strain physics of metal oxide semiconductor (MOS) devices. The results have also been compared with numerically reported results and show good agreement.

In Metal chalcogenide hierarchical nanostructures as energy conversion devices were studied in this chapter. Cd-chalcogenide nanostructures were chosen as sample study due to their unique properties as energy converter. In the first step, different methods were introduced to grow this type of nanostructures. It was discussed three low cost-effective methods to grow the Cd-chalcogenide nanostructures such as thermal evaporation (chemical and physical vapor depositions), chemical bath deposition, and electrochemical methods. However, it was observed that samples were grown by a pulsed laser deposition method as a complex method. In addition, effects of growth conditions on morphology and optical properties of the nanostructures were investigated. In the second step, the fundamentals of solar energy conversion were described. Furthermore, quantum physics of semi- conductor solar cells was studied. Finally, the Cd-chalcogenide nanostructures were introduced as solar energy conversion and important factors that can affect the efficiency of this type of solar cells were introduced.

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