Mosfet Models, Quantum Mechanical Effects and Modeling Approaches: A Review

Chaudhry, Amit; Roy, Jitendra Nath

doi:10.5573/jsts.2010.10.1.020

Cited by 17 publications

(7 citation statements)

References 19 publications

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“…It is argued that hydrodynamic model produces the carrier velocity overshoot even in the ballistic regime, which overestimates the drain current level [23]. Furthermore, the quantum confinement effect in the deep scaled device may not be negligible [24]. This is because the inversion charge layer thickness in the conducting silicon nanowire channel is comparable to the nanowire dimension.…”

Section: Simulation Methodology and Calibrationmentioning

confidence: 98%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

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In this paper, we explore the quantitative investigation of the high-frequency performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET and compared with silicon nanowire MOSFET(SiNW MOSFET) using device simulators: ATLAS and DEVEDIT 3D. Simulation results demonstrate the improved RF performance exhibited by GEWE-SiNW MOS-FET over SiNW MOSFET in terms of transconductance (g m ), cut-off frequency ( f T ), maximum oscillator frequency ( f MAX ), power gains (Gma, G MT ) parasitic capacitances, stern's stability factor and intrinsic delay. Further, using three-dimensional device simulations, we have also examined the efficacy of parameter variations in terms of oxide thickness, radius of silicon nanowire, channel length and gate metal workfunction engineering on RF/microwave figure of merits of GEWE-SiNW MOSFET. Simulation result reveals significant enhancement in f T and f MAX ; and a reduction in switching time in GEWE-SiNW MOSFET due to alleviated short channel effects, improved drain current and smaller parasitic capacitance, thus providing detailed knowledge about the device's RF performance at such aggressively scaled dimensions.

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Section: Simulation Methodology and Calibrationmentioning

confidence: 98%

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

2015

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“…The various models are used for simulation of DMG CL-NWMOSFET, such as Shockey Read Hall (SRH) [26] for generation and recombination of carrier, Bohm Quantum Model (BQP) for quantum mechanical effect, which cannot be ignored in Nanoscale [27]. In BQP model the values of alpha and gamma are taken as 0.5 and 1.2 respectively [28].…”

Section: Model Usedmentioning

confidence: 99%

In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector

Sharma

Kumar

Raj³

et al. 2021

Silicon

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This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1-xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1-xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1-xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW -1 ), high Iillumination/Idark (1.36 * 10 9 ) and quantum-efficiency (1.12 %). The obtained results of In1-xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.

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“…The quantum confinement effect in the deep scaled device may not be negligible [27]. Since the inversion charge layer thickness in the conducting silicon nanowire channel is comparable to the nanowire dimension, the effect of quantum confinement in sub-nanometre device may not be negligible.…”

Section: Introductionmentioning

confidence: 99%

Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

Gupta

Chaujar

2016

Appl. Phys. A

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In this paper, we have investigated the smallsignal behaviour and RF noise performance of gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) MOSFET, and the results so obtained are simultaneously compared with SiNW and conventional MOS-FET at THz frequency range. This work examines reflection and transmission coefficients, noise conductance, minimum noise figure and cross-correlation factor. Results reveal significant reduction in input/output reflection coefficient and an increase in forward/reverse transmission coefficient owing to improved transconductance in GEWESiNW in comparison with conventional counterparts. It is also observed that minimum noise figure and noise conductance of GEWE-SiNW is reduced by 17.4 and 31.2 %, respectively, in comparison with SiNW, thus fortifying its potential application for low-noise amplifiers (LNAs) at radio frequencies. Moreover, the efficacy of gate metal workfunction engineering is also studied and the results validate that tuning of workfunction difference results further improvement in device small-signal behaviour and noise performance.

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Mosfet Models, Quantum Mechanical Effects and Modeling Approaches: A Review

Cited by 17 publications

References 19 publications

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

Impact of device parameter variation on RF performance of gate electrode workfunction engineered (GEWE)-silicon nanowire (SiNW) MOSFET

In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector

Influence of gate metal engineering on small-signal and noise behaviour of silicon nanowire MOSFET for low-noise amplifiers

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