Simple photolithographic techniques are used to fabricate single InP nanowire devices with back-to-back Schottky barriers. Direct imaging of the photoresponse shows that the active regions of the device are spatially localized near the reverse-biased Schottky barrier. By tuning the laser excitation energy from below to well above the energy gap, photocurrent spectroscopy can illuminate the zincblende or wurtzite nature of the nanowire device even at room temperature.

Photocurrent spectroscopy has been carried out on single CdS nanosheet devices in the metal-semiconductor-metal configuration with both Schottky and Ohmic contacts. Spatial imaging of the photocurrent shows that the photosensitive regions are localized at the reverse biased contact for Schottky type contacts and uniformly distributed throughout the nanosheet for Ohmic contacts. Photocurrent spectra show excitonic resonances at low temperatures corresponding to the A, B, C hole bands. Subband gap pulsed laser excitation reveals two-photon absorption dominated photocurrents consistent with a nonlinear coefficient of β=2 cm/GW for these nanosheet devices.

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This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1-xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1-xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1-xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW -1 ), high Iillumination/Idark (1.36 * 10 9 ) and quantum-efficiency (1.12 %). The obtained results of In1-xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.

This paper reports the performance assessment of vertical silicon nanowire TFET (V-siNWTFET) design for biosensor applications using dielectric-modulation and gate underlap technique. The sensitivity of the V-siNWTFET is recognizing by immobilizing the different biological molecules such as lipids, biotin, uricase, protein, Gox, streptavidin, uriease, zein etc. in the cavity region which is created under the gate electrode and source oxide. The performance analysis is observed by varying the relative permittivity of the different biomolecules and analyzes the parametric variation both for neutral and charged biomolecules. The sensitivity of the biosensor has been detecting in the terms of drain current (I D ), threshold voltage (V TH ), subthreshold slope (SS), transconductance (g m ), and I ON /I OFF ratio. The proposed device structure has capable to reduce the leakage currents and high sensitivity biosensor design in the nanoscale regimes. The obtained best optimum parameters of the proposed devices are I ON (1.37E−08 A/µm), I OFF (9.44E−19 A/µm), SS (29.97 mV/dec) and I ON /I OFF (4.29E + 10) ratio with gate work-function (ϕ gate = 4.8 eV) and uniformly doped (1 × 10 –19 cm −3 ) silicon nanowire at drain to source voltage (V DS = 1.0 V). The higher sensitivity of the proposed V-siNWTFET for Biosensor is observed for Zein biomolecules (K = 5).

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