Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications

Kumar, Parveen; Sharma, Shubham; BalwinderRaj,

doi:10.1007/s12633-020-00718-5

Cited by 20 publications

(7 citation statements)

References 34 publications

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“…At the emerging application section, although we provide only a few applications that utilized external forces to improve the device performance, various applications (such as solar cell, [140] Avalanche photodiode, [141] LWIR application, [142] low power digital application, [143][144][145] memory, [146] and biosensor [147,148] ) are required external forces to achieve optimal or multi-functional performance.…”

Section: (13 Of 17)mentioning

confidence: 99%

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Woo

Kim

Yoo

2022

Adv Elect Materials

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Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult to reach a higher level of electrical characteristics with only a combination of materials based on their intrinsic characteristics. External forces, such as electric fields, light, and temperature, can modulate the electron and hole concentration and control the tunneling probability and the electrical characteristics of heterostructure electronics. Recent articles employing external forces to improve the BTBT performance and demonstrate the mechanism of BTBT devices are summarized with five representative external forces. Moreover, the utility of the external force‐induced performance improvement of the BTBT device is also discussed by providing various applications.

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Section: (13 Of 17)mentioning

confidence: 99%

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Woo

Kim

Yoo

2022

Adv Elect Materials

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“…The CDGTFET is designed using Source doped with ptype material with uniform concentration of 1e+10 20 , Drain doped with n-type material with uniform concentration of 1e+10 17 . A channel is formed with intrinsic material.…”

Section: A Conventional Double Gate Tfet (Cdgtfet)mentioning

confidence: 99%

“…The simulated output is given in the following figure 5. The device parameters for simulation are mentioned in Table 1 The VDMDGTFET is designed using Source doped with ptype material with the concentration of 1e+10 20 , Drain doped with n-type material with concentration of 1e+10 17 . The device parameters for simulation are mentioned in Table 2 The doping profile of Source and drain has uniform concentration.…”

Section: A Conventional Double Gate Tfet (Cdgtfet)mentioning

confidence: 99%

Qualitative Analysis of DG-TFET Structures with Gate Material Engineering

Balaji

Sravani

Rao

2022

JICS

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The paper largely focuses on enhancing device parameters of a Double Gate Tunnel Field Effect Transistor structure such as ON current, OFF Current,transconductance and ratio of ON current to OFF current (ION / IOFF) using hetero dielectric gate material. The paper presents three state of art of dual gate TFET i.e., Conventional Double Gate TFET (CDGTFET), horizontally placed Dual Material Double Gate TFET (HDMDGTFET), vertically placed Dual Material Double Gate TFET (VDMDGTFET). The dual material dielectric combinations used in the structures are (SiO2-TiO2), (HfO2-TiO2) and (SiO2-SiC). The Structures are being modeled using Silvaco Atlas tool. Simulations of these structures are carried out and various electrical parameters have been obtained. The results obtained from simulation of these structures are being presented and discussed in this paper. Comparison of the three structures is carried out and resulted in the reduction of ON Current and OFF Current is observed.

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“…Nanowires (NW) comprises of Indium gallium arsenide (InGaAs) is favorable semiconductor material due to its excellent properties such as emission wavelength over large spectral ranges, tunable band gap, variable Schottky barrier heights, high saturation velocities, one dimensional conduction, with high absorption coefficients [1][2][3] and it additionally gives epitaxial combination on silicon substrate [4][5][6][7]. In current Nanoscale industry, huge number of electronic and photonic devices is designing based on devices such as photonic crystal laser [8], nanolasers [9], light-emitting diodes (LED) [10], and solar cells [11], as well as tunnel diodes [12] and short channel three dimensional (3D) transistors [13].…”

Section: Introductionmentioning

confidence: 99%

In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector

Sharma

Kumar

Raj³

et al. 2021

Silicon

Self Cite

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This paper proposed a highly sensitive Double Metal Gate-stacking Cylindrical Nanowire-MOSFET (DMG CL-NWMOSFET) photosensor by using In1-xGaxAs. For the best control of short channel effects (SCEs), a double metal gate has been utilized and for efficient photonic absorption, III-V compound has been utilized as channel material. The currently available Conventional Filed-Effect-Transistors (CFET) based photosensor have been used threshold voltage as parameter for the calculation of sensitivity, but in the proposed photosensor, change in subthreshold current has been used as the detecting parameters for sensitivity (Iillumination/Idark). The scientifically electrons study and the photo-conductive characteristics of In1-xGaxAs CL-NWMOSFET are taken through Silvaco Atlas Tools. After the analysis of In1-xGaxAs dual Metal Gate Stacking Cylindrical NWMOSFET responds to detectable spectrum (~ 450 nm), incidents light with constant, reversible and fast response by responsivity (4.3 mAW -1 ), high Iillumination/Idark (1.36 * 10 9 ) and quantum-efficiency (1.12 %). The obtained results of In1-xGaxAs DMG CL-NWMOSFET based photodetectors have the potential in optoelectronics applications.

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Comparative Analysis of Nanowire Tunnel Field Effect Transistor for Biosensor Applications

Cited by 20 publications

References 34 publications

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Qualitative Analysis of DG-TFET Structures with Gate Material Engineering

In1 − xGaxAs Double Metal Gate-Stacking Cylindrical Nanowire MOSFET for Highly Sensitive Photo Detector

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