Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor

Kumar, Parveen; Raj, Balwinder

doi:10.1016/j.mejo.2023.105826

Cited by 9 publications

(3 citation statements)

References 44 publications

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“…Despite all of these advantages, a strong prevalence of parasitic capacitance in FinFET devices [23] is likely to result in large overlap of the immobilized biomolecule capacitance with the device capacitance, which could adversely impact the sensitivity of short-channel FinFET-based biosensors [24,25]. Also, even with excellent I ON /I OFF and steep switching reports in TFET devices [26][27][28][29][30], a great disparity in measured and simulated device behavior has been seen [31]. In addition, biosensors based on TFET devices are likely to be more susceptible to low-frequency noise [33], along with observation of limits of the scalability and hence sensitivity due to a strong dependence on the size and position of the cavity (located close to the tunneling barrier [34]).…”

Section: Introductionmentioning

confidence: 99%

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Kansal,

Medury

2024

Semicond. Sci. Technol.

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Dielectrically modulated (DM) Negative Capacitance Field Effect Transistor (NCFET) based label-free Biosensors have emerged as promising devices for accurate detection of various biomolecules, where the sensitivity of DM architectures strongly depends on the sensing mechanism as well as on the size of the nano-cavity. Therefore, to achieve higher sensitivity along with reduced fabrication complexity, we propose to utilize a pre-existing drain-sided spacer region as a nano-cavity, in a Fully Depleted Silicon-on-insulator (FDSOI) based NCFET architecture. The Ferroelectric (FE) layer in the Metal-Ferroelectric-Insulator-Semiconductor (MFIS) configuration meaningfully alters the impact of drain's electric field on the source-sided electrostatics, which results in higher sensitivity. Having quantified the sensitivity for an FE-DE gate stack based NCFET Biosensor, we now propose to include a Paraelectric (PE) layer between Ferroelectric (FE) and Dielectric (DE) materials, thus modifying the gate stack from FE-DE to FE-PE-DE with an equivalent negative capacitance seen from both the stacks, where a remarkable improvement is seen in the FE-PE-DE gate stack based NCFET with nearly identical linearity performance as seen from the high value of Pearson's coefficient (r2 ≥ 0.9). Therefore, in order to illustrate the efficacy of the proposed sensing mechanism and the modified gate stack (FE-PE-DE), dielectric constant (kBio) values in the range of kBio = 4.5 to kBio = 75.99 are considered. Finally, the effect of scaling the channel length (Lg) on the sensitivity of the FE-PE-DE NCFET device is shown and a high value, particularly at lower permittivity, demonstrates the versatility and wide applicability of the proposed NCFET Biosensor.

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Section: Introductionmentioning

confidence: 99%

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Kansal,

Medury

2024

Semicond. Sci. Technol.

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“…CNTFETs are characterized as transistors with high mobility, low power consumption, and small size. They have a wide range of applications from electronic fields, e.g., electronic circuits, to biomedical applications, e.g., biosensors and drug delivery [23,24]. Hence, silicon nanowires have attracted wide attention thanks to critical factors such as high crystalline structure, high aspect ratio bottom-up reproducible fabrication process instead of top-down lithography processes, and higher carrier mobilities rather than nanoscale planar devices [25,26].…”

Section: Introductionmentioning

confidence: 99%

Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

GolshanBafghi

2023

JCHAR

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Nanostructured solid-state devices demonstrate prominent electronic transport properties and thus represent powerful building blocks for a wide range of analog and digital integrated circuits and systems. In this study, the integration of the side-contacted field effect diode (S-FED) with the silicon nanowire concept is pursued to create a device that maintains a substantial aspect ratio while delivering suitable execution. The nanowire side-contacted FED (NW-SFED), referred to as this apparatus, exhibits the capability to achieve an exceptionally high ON/OFF current ratio of 4×10 8 , allowing for efficient switching between ON and OFF states. While the downscaling of the planar CMOS technology has faced severe constraints, this characteristic is featured as a figure of merit for the NW-SFED device. Accordingly, the device can also be used in a coordinated device-circuit co-design framework as a promising candidate to mitigate noise, delay, and energy. Herein, a quantitative evaluation of NW-SFED's performance is conducted utilizing a semiconductor drift-diffusion solver to explore how variations in channel length, device width, as well as the dimensions of the n + and p + doped regions in the source and drain, respectively, influence its operational characteristics. The impact of the channel length, spacer length and device width on NW-SFED fabrication turned out to be negligible. In contrast, the thickness of doped regions emerged as the critical parameter in the fabrication process.

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“…TFET shows low I ON that can be controlled by many methods like dual metal gate, triple metal gate, tunneling junction with two materials, dual metal gate and many others. [9][10][11][12][13][14][15] To increase the device density nanowire structures are mostly preferred. Today NW-TFETs are in demand because of its latest density, good electrostatic control on the channel, less SS.…”

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confidence: 99%

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

Kumar,

Raj,

Wadhwa

et al. 2024

ECS J. Solid State Sci. Technol.

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This work is based on the analysis and designing of gate all around N+-doped layer nanowire tunnel field-effect transistors (NTFET) without junctions for application in a biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS), and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity and tunneling probability is further improved by N+ doped layer (1×1020cm-3). The change in the subthreshold-slope (SS), drain current (ID), transconductance(gm), and ratio of ION/IOFF has been examined to detect the sensitivity of the proposed device by confining various biomolecules in the area of nanocavity. The nanocavity area creates a shield in the source gate of oxide layer and electrodes metal. The junctionless GAA-NTFET (JLGAA-NTFET) shows less leakage current and large control on the channel. The design of JLGAA-NTFET is with high doping concentration and observed higher sensitivity for APTS biomolecule which is suitable for sensor design application.

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Design and simulation of junctionless nanowire tunnel field effect transistor for highly sensitive biosensor

Cited by 9 publications

References 44 publications

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

A negative capacitance field effect transistor with a modified gate stack and drain-side cavity for label-free biosensing

Performance and Geometry Study of Silicon Nanowire-based Field Effect Diodes (FED)

Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor

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