A Performance Comparison Between $\beta$ -Ga<sub>2</sub>O<sub>3</sub> and GaN HEMTs

Kumar, Sandeep; Soman, Rohith; Pratiyush, Anamika Singh; Muralidharan, R.; Nath, Digbijoy N.

doi:10.1109/ted.2019.2924453

Cited by 32 publications

(23 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results show β-Ga 2 O 3 can deliver higher RF output power over GaN HEMTs in low frequency region (up to X-band) as estimated in. 10 Although, short channel effect like DIBL shows a reasonable value of 91 mV/V and gate leakage current in the order of 10 −12 A/mm, but a high value of sub-threshold swing 654 mV/dec may limit its switching speed. BGO HEMT structure scaled down to gate length of 50 nm shows high output conductance of 0.866 S/mm which may lead to poor electrostatic integrity of the device.…”

Section: Discussionmentioning

confidence: 99%

“…However, poor thermal conductivity (27 W/mK) 34 of β-Ga 2 O 3 material demands proper thermal management at device-level to mitigate self-heating effects, and with reports estimating a quite low electron mobility (180 cm 2 /Vs) in β-Ga 2 O 3 MODFETs, 17 it would require larger device periphery as compared to GaN technology for DC switching applications. 10 It should be noted that maximum achievable room-temperature carrier mobility in β-Ga 2 O 3 MODFETs is limited to 200 cm 2 /Vs, 8 which is almost one order below than 2DEG channel mobility 1500 cm 2 /Vs 22 in AlGaN/GaN HEMTs. This was attributed to enhanced electron-phonon interactions as well as high electron effective mass in Ga 2 O 3 as estimated in Reference 8.…”

Section: Introductionmentioning

confidence: 96%

“…Consequently, β-Ga 2 O 3 possesses enough potential to claim more stake in optoelectronics 4 and microwave devices. 10 Early reported β-Ga 2 O 3 devices, such as Schottky diodes, 11 metal semiconductor field-effect transistors (MESFETs), 7 metal oxide semiconductor field-effect transistors (MOSFETs) 12,13 and modulation-doped field-effect transistors (MODFETs) 14,15 or high electron mobility transistor (HEMTs) have shown excellent DC performance. More recently, β-Ga 2 O 3 based (Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 HEMTs with two-dimensional electron gas (2DEG) density of 10 12 cm −2 at the heterointerface by using silicon delta-doped layer have been reported.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, it also limits its DC switching performance and to match GaN HEMT power rating (efficiency and power dissipation), β-Ga 2 O 3 devices should have larger gate periphery. 10 However, lateral device design remains favorable for RF applications. Furthermore, as indicated by Johnson Figure of Merit (JFOM) and considering electron saturation velocity (v sat ) = 1.5 × 10 7 cm/s, 22 it is estimated that β-Ga 2 O 3 HEMT may outperform over GaN counterpart in the low frequency regime (up to X-band) in terms of high RF output power.…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, as indicated by Johnson Figure of Merit (JFOM) and considering electron saturation velocity (v sat ) = 1.5 × 10 7 cm/s, 22 it is estimated that β-Ga 2 O 3 HEMT may outperform over GaN counterpart in the low frequency regime (up to X-band) in terms of high RF output power. 10 As far as low thermal conductivity enabled self-heating in β-Ga 2 O 3 devices is concerned, previously developed approaches for GaN-higher thermal conductivity diamond integration (passive cooling solution), and different microchannel cooling mechanism (active cooling mechanism) are also relevant for β-Ga 2 O 3 devices. Recently, using thermal simulation, various studies on measurement of thermal resistance (TR) and peak lattice temperature in β-Ga 2 O 3 devices are reported.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

Singh

Lenka

Velpula

et al. 2020

Int J Numerical Modelling

View full text Add to dashboard Cite

In this paper, a novel β-Ga 2 O 3 high electron mobility transistor (BGO-HEMT) with record-high intrinsic unity current gain cutoff frequency (f T) of 166 GHz and RF output power (P OUT) of 2.91 W/mm is demonstrated through 2D device simulations using an appropriate negative differential mobility model. The highly scaled proposed device uses 10 nm AlN barrier layer on 50 nm β-Ga 2 O 3 buffer with gate-length (L G) of 50 nm and aspect-ratio (gate length to barrier thickness) of 5 ensures significant gain in high-frequency performance. The novel device design offers very low access and dynamic resistance due to highly doped n + access regions, and a finite gap between ohmic contacts and barrier layer to mitigate source choking effect. The device's superior DC and RF performance is well supported by large two-dimensional electron gas (2DEG) density (n s) of the order of 10 13 cm −2 due to large band discontinuity in AlN/β-Ga 2 O 3 heterostructure and highly polarized AlN material. The device shows maximum drain current density (I DMAX) of 11.5 A/mm and peak transconductance (g m) of 0.917 S/mm at V DS = 15 V and V GS = 0 and − 7 V respectively. Furthermore, the term 2π (f T × L G) for the device shows a value of 0.5 × 10 7 cm/s, very close to v sat of 1.5 × 10 7 cm/s in β-Ga 2 O 3. These promising results enhance the potential of β-Ga 2 O 3 for future high power RF and microwave applications.

show abstract

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

Singh

Lenka

Velpula

et al. 2020

Int J Numerical Modelling

View full text Add to dashboard Cite

show abstract

Liquid Metal‐Printed Semiconductors

Song,

Li,

Wang

et al. 2024

Adv Eng Mater

View full text Add to dashboard Cite

Liquid metal electronic ink (e‐ink) that made from gallium, indium, tin, zinc, bismuth or their alloy is promising new generation material for printed electronics. Extended from this ideal platform, such ink can be post‐processed or loaded with semiconductor nanoparticles to further make semiconductors in the forms of dots, wires and films on its surface. In this way, targeted semiconductors can be quickly fabricated and patterned as desired via the printing way with low cost at around the room temperature. This leads to the unconventional bottom‐up strategy for direct additive manufacture of functional devices. Along this direction, a series of p‐n junction diodes, field effect transistors and light‐emitting devices have been developed so far. It is clear that the liquid metal printed semiconductor would significantly innovate the classical processes of preparing integrated circuits (IC) and electronic devices. To push forward further progress of this cutting‐edge frontier, this article is dedicated to present an overview of liquid metal printed semiconductor. We first introduce the material category of liquid metal semiconductor e‐inks and their synthesis approaches. Then the core strategies toward printing semiconductors are systematically outlined. Following that, we summarize the typical printed semiconductor materials and electronic devices thus constructed as well as their potential applications. Lastly, scientific and technical challenges thus raised are interpreted. Perspective in the area is given.This article is protected by copyright. All rights reserved.

show abstract

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Qiu

Peng

et al. 2020

Adv Elect Materials

View full text Add to dashboard Cite

Steep‐slope devices are predicted to provide excellent quality for analog integrated circuit applications due to their high transconductance efficiency (gm/Ids) breaking the metal‐oxide‐semiconductor field‐effect transistor limit (38.5 V−1). The potential advantage of a Dirac‐source FET (DSFET) as an analog transistor is explored based on a graphene/carbon nanotube (CNT) heterojunction. A high gm/Ids beyond 38.5 V−1 over four decades of current is experimentally demonstrated in an individual CNT‐based DSFET, reaching a peak value of 66 V−1, which is a new record for all reported transistors. Importantly, this high gm/Ids extends beyond the subthreshold region and leads to transconductance amplification in the overthreshold region. The best peak transconductance at a low bias of −0.1 V exceeds 20 µS per tube, which has approximately threefold improvement over that of a normal CNT FET with a shorter gate length. Outperforming other advanced devices, the extended high transconductance efficiency greatly promotes DSFET competitiveness in the high‐precision analog field.

show abstract

A Performance Comparison Between $\beta$ -Ga₂O₃ and GaN HEMTs

Cited by 32 publications

References 27 publications

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

Liquid Metal‐Printed Semiconductors

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Contact Info

Product

Resources

About

A Performance Comparison Between $\beta$ -Ga2O3 and GaN HEMTs

Cited by 32 publications

References 27 publications

A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm

A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm

Liquid Metal‐Printed Semiconductors

Transconductance Amplification in Dirac‐Source Field‐Effect Transistors Enabled by Graphene/Nanotube Hereojunctions

Contact Info

Product

Resources

About

A Performance Comparison Between $\beta$ -Ga₂O₃ and GaN HEMTs

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm