A novel <scp>β‐Ga2O3 HEMT</scp> with <scp>fT</scp> of 166 <scp>GHz</scp> and X‐band <scp>POUT</scp> of 2.91 W/mm

Singh, Rajan; Lenka, Trupti Ranjan; Velpula, Ravi Teja; Jain, Barsha; Bui, Ha Quoc Thang; Nguyen, Hieu Pham Trung

doi:10.1002/jnm.2794

Cited by 24 publications

(5 citation statements)

References 46 publications

(121 reference statements)

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“…However, here, the estimated value of f T is significantly lower than the previously reported f T value by our group for AlN/β-Ga 2 O 3 HEMT with gate-length L G of 50 nm. 34 Here, the lower f T value can be explained based on the relatively large gate capacitance of T-gate as f T / 1/C GG , where C GG is the gate capacitance, and also reported in Ref. 15.…”

Section: Rf Characteristicssupporting

confidence: 59%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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In this paper, we report DC and RF analysis of a T‐gate AlN/β‐Ga2O3 high electron mobility transistors (HEMTs) by optimizing the gate‐drain distance (LGD) and two T‐gate dimensions given by the—head‐length (LHL) and the foot‐length (LFL). A two‐dimensional (2‐D) physics‐based device simulator attuned with experimental results is used to perform the analysis. The AlN/β‐Ga2O3 HEMT achieves a high two‐dimensional electron gas (2DEG) density of ~3 × 1013 cm−2, which is attributed to large spontaneous as well as piezoelectric polarization components of the 10 nm AlN thick barrier layer. 2DEG density is also numerically validated using widely used polarization model for III nitrides. It is demonstrated that a highly scaled, both lateral and vertical, device with optimized T‐gate dimensions achieves higher blocking voltage (VBR), low on‐resistance (RON), higher cut‐off frequency (fT) and higher maximum oscillation frequency (fMAX), simultaneously. Consequently, AlN/β‐Ga2O3 HEMT achieves a low specific‐on resistance (RON,sp) of 0.1 mΩ cm2 and an off‐state breakdown voltage of 904 V, which corresponds to the record power figure‐of‐merit (PFoM) of ~8172 MW/cm2. Furthermore, fT of 73 GHz and fMAX of 142 GHz are estimated. These results—low power conduction loss along with higher blocking voltage, and superior RF parameters show the potential of the analyzed device T‐gate AlN/β‐Ga2O3 HEMT for high‐power switching and RF applications.

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Section: Rf Characteristicssupporting

confidence: 59%

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Singh¹,

Rao

Lenka

et al. 2023

Int J Numerical Modelling

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“…AlN is potentially a better alternative to AlGO/GO MODFETs with its higher CBO to β-Ga 2 O 3 of ≈1.7-1.86 eV and polarization-induced charge, leading to larger 2DEG concentrations of 3 × 10 13 -5 × 10 13 cm −2 [192][193][194]. Currently, no AlN/β-Ga 2 O 3 HEMTs have been fabricated and reported; however, multiple TCAD simulations show promise, with much higher frequency operations up to an f T of 166 GHz and f max of 142 GHz [195][196][197].…”

Section: Aln/gomentioning

confidence: 99%

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Maimon,

2023

Materials

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Power electronics are becoming increasingly more important, as electrical energy constitutes 40% of the total primary energy usage in the USA and is expected to grow rapidly with the emergence of electric vehicles, renewable energy generation, and energy storage. New materials that are better suited for high-power applications are needed as the Si material limit is reached. Beta-phase gallium oxide (β-Ga2O3) is a promising ultra-wide-bandgap (UWBG) semiconductor for high-power and RF electronics due to its bandgap of 4.9 eV, large theoretical breakdown electric field of 8 MV cm−1, and Baliga figure of merit of 3300, 3–10 times larger than that of SiC and GaN. Moreover, β-Ga2O3 is the only WBG material that can be grown from melt, making large, high-quality, dopable substrates at low costs feasible. Significant efforts in the high-quality epitaxial growth of β-Ga2O3 and β-(AlxGa1−x)2O3 heterostructures has led to high-performance devices for high-power and RF applications. In this report, we provide a comprehensive summary of the progress in β-Ga2O3 field-effect transistors (FETs) including a variety of transistor designs, channel materials, ohmic contact formations and improvements, gate dielectrics, and fabrication processes. Additionally, novel structures proposed through simulations and not yet realized in β-Ga2O3 are presented. Main issues such as defect characterization methods and relevant material preparation, thermal studies and management, and the lack of p-type doping with investigated alternatives are also discussed. Finally, major strategies and outlooks for commercial use will be outlined.

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“…Furthermore, along with the choice of suitable material, device design strategy is crucial to fully attain the potential of any material. Recently, several groups have demonstrated Ga 2 O 3 -based HEMTs with buffer layer engineering, gate and substrate engineering, etc [13][14][15]. Various other device design strategies, such as the implementation of a highly doped cap layer with a sub-micron gate recess process [16], incorporation of a highly doped channel with a T-shaped gate [17], and ultra-scaled delta-doped FET [18], have also been reported.…”

Section: Introductionmentioning

confidence: 99%

Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications

Goyal,

Kaur

2024

Semicond. Sci. Technol.

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This study involves in-depth simulations focused on gate electrode and channel doping engineering on ultra-scaled Ga2O3 FinFETs. TCAD Silvaco was employed as the simulation tool to explore the suitability of these designs for sub-terahertz applications. The focus of the present study is the simultaneous enhancement in current drivability as well as reduction in parasitic capacitances without any trade-off, in order to achieve superior performance for sub-terahertz application. Along with the analog characteristics of the proposed device, various critical high frequency figure of merits have also been evaluated. Furthermore, scattering – parameters have also been studied with variations in frequency in order to get insights about the performance of the proposed device at high frequencies. In addition, a thorough comparison of the proposed device has been carried out with the conventional device. It has been demonstrated that the proposed device is an excellent contender for the ultra-high frequency applications with remarkable high frequency figure of merits.

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A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

Cited by 24 publications

References 46 publications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications

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A novel β‐Ga2O3 HEMT with fT of 166 GHz and X‐band POUT of 2.91 W/mm

Cited by 24 publications

References 46 publications

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga2O3 HEMT for DC, RF and high‐power nanoelectronics switching applications

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications

Realization of an ultra-scaled novel Ga2O3 FinFET for sub-terahertz applications

Contact Info

Product

Resources

About

A novel β‐Ga₂O₃ HEMT with f_T of 166 GHz and X‐band P_OUT of 2.91 W/mm

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Design and simulation of T‐gate AlN/β‐Ga₂O₃ HEMT for DC, RF and high‐power nanoelectronics switching applications

Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications