Realization of an ultra-scaled novel Ga₂O₃ FinFET for sub-terahertz applications

Abstract

This study involves in-depth simulations focused on gate electrode and channel doping engineering on ultra-scaled Ga2O3 FinFETs. TCAD Silvaco was employed as the simulation tool to explore the suitability of these designs for sub-terahertz applications. The focus of the present study is the simultaneous enhancement in current drivability as well as reduction in parasitic capacitances without any trade-off, in order to achieve superior performance for sub-terahertz application. Along with the analog characteristics of the proposed device, various critical high frequency figure of merits have also been evaluated. Furthermore, scattering – parameters have also been studied with variations in frequency in order to get insights about the performance of the proposed device at high frequencies. In addition, a thorough comparison of the proposed device has been carried out with the conventional device. It has been demonstrated that the proposed device is an excellent contender for the ultra-high frequency applications with remarkable high frequency figure of merits.