A particle-in-cell plus Monte Carlo study of plasma-induced damage of normal incidence collector optics used in extreme ultraviolet lithography

Wieggers, R. C.; Goedheer, W. J.; Akdim, Mohamed Reda; Bijkerk, F.; Zegeling, P. A.

doi:10.1063/1.2829783

Cited by 7 publications

(6 citation statements)

References 16 publications

(8 reference statements)

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“…Incidental energetic ions irradiation of MLs can also occur in the intended operating environment. 1 keV hydrogen irradiation of Mo/Si MLs has been used to simulate the effects of the quite solar wind plasma on optical components of solar research instrumentation [24], while simulation of near-surface lightinduced plasma production showed maximum ion-impact energies of ~100 eV [58].…”

Section: Incorporation Of Additional Atoms Resulted In H 2 Formationmentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

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The role that energetic (>800 eV) hydrogen ions play in inducing and modifying the formation of blisters in nanoscale Mo/Si multilayer samples is investigated. Such samples are confirmed to be susceptible to blistering by two separate mechanisms. The first is attributed to the segregation of H atoms to voids and vacancies associated with the outermost Mo layer, driving blister formation in the form of H 2 filled bubbles. This process can occur in the absence of ions. A second blister distribution emerges when energetic ions are present in the irradiating flux. This is attributed to an ion-induced vacancy clustering mechanism that produces void blisters. The defects and strained states associated with the Moon -Si interfaces provide the preferred nucleation points for blistering in both cases. The effects of ions are ascribed to promotion of hydrogen uptake and mobility, in particular through the Si layers; to the generation of additional mobile species in the Si and Mo layers; and to the creation of new blister nucleation points. In addition to directly stimulating blistering via vacancy clustering, ions modify the development of H 2-filled blisters. This is most evident in the formation of multi-component structures due to overlapping delaminations at different layer interfaces. This affect is attributed to the introduction of active transport of hydrogen from the H 2 filled blisters across the outermost Moon -Si interface to the underlying layers. Ion-induced variations in hydrogen uptake and distribution and in the rates of blister nucleation and growth produce lateral differences in blister size and areal number density that create a macroscopic concentric pattern across the surface.

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Section: Incorporation Of Additional Atoms Resulted In H 2 Formationmentioning

confidence: 99%

Ion effects in hydrogen-induced blistering of Mo/Si multilayers

Kuznetsov

Gleeson

Bijkerk

2013

Journal of Applied Physics

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“…The distribution of the impact energy of these ions is determined by the electron energy distribution function (EEDF) of the EUV-induced plasma to a large extent. In EUVL, the EEDF might be significantly altered by secondary electron emission from EUV irradiated surfaces, and therefore this secondary electron emission also affects the energies and fluxes of ions towards relevant surfaces [10,21,61,79]. Metals emit electrons when they are illuminated with electromagnetic radiation with photon energies above the work function W. Of these electrons, only a small part is emitted as primary electrons straight from the surface and have energy E prim = hυ − W. However, the absorption length for EUV photons in metals is much larger than the electron mean free path in the same material.…”

Section: Ionic Particle Fluxesmentioning

confidence: 99%

EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

et al. 2019

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After a long period of relatively low interest, science related to effects in the Extreme Ultraviolet (EUV) spectrum range experienced an explosive boom of publications in the last decades. A new application of EUV in lithography was the reason for such a growth. Naturally, an intensive development in such area produces a snowball effect of relatively uncharted phenomena. EUV-induced plasma is one of those. While being produced in the volume of a rarefied gas, it has a direct impact onto optical surfaces and construction materials of lithography machines, and thus has not only scientific peculiarity, but it is also of major interest for the technological application. The current article provides an overview of the existing knowledge regarding EUV-induced plasma characteristics. It describes common, as well as distinguishing, features of it in comparison with other plasmas and discusses its interaction with solid materials. This article will also identify the gaps in the existing knowledge and it will propose ways to bridge them.

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“…The interaction of a plasma with a metal surface is a common phenomenon in a multitude of scenarios: solar winds interact with satellite shielding [1]; particles in accelerators collide with electrostatic optics [2]; divertors in fusion reactors face high ion fluxes [3]; diffuse plasmas in extreme ultraviolet (XUV) lithography may interact with reflective optics [4][5][6]; magnetically confined plasmas in sputter deposition systems bombard metallic targets [7]. In nearly all cases, with the exception of sputter deposition, the interaction is unwanted and possibly damaging to the metal surface.…”

Section: Introductionmentioning

confidence: 99%