2019
DOI: 10.3390/app9142827
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EUV-Induced Plasma: A Peculiar Phenomenon of a Modern Lithographic Technology

Abstract: After a long period of relatively low interest, science related to effects in the Extreme Ultraviolet (EUV) spectrum range experienced an explosive boom of publications in the last decades. A new application of EUV in lithography was the reason for such a growth. Naturally, an intensive development in such area produces a snowball effect of relatively uncharted phenomena. EUV-induced plasma is one of those. While being produced in the volume of a rarefied gas, it has a direct impact onto optical surfaces and c… Show more

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Cited by 45 publications
(35 citation statements)
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“…Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. and occur frequently in a wide variety of mature industrial processes and research niches such as semiconductor manufacturing [3,4], nuclear fusion [5], and (functional) materials embedding nanoparticles [6][7][8]. The non-equilibrium between electron and heavy species temperatures provides a key advantage for low-temperature plasmas over conventional alternatives, resulting in (permanently and) negatively charged surfaces of, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. and occur frequently in a wide variety of mature industrial processes and research niches such as semiconductor manufacturing [3,4], nuclear fusion [5], and (functional) materials embedding nanoparticles [6][7][8]. The non-equilibrium between electron and heavy species temperatures provides a key advantage for low-temperature plasmas over conventional alternatives, resulting in (permanently and) negatively charged surfaces of, e.g.…”
Section: Introductionmentioning
confidence: 99%
“…With the introduction of EUV lithography [22] -using 13.5 nm photons -in the semiconductor industry, the understanding and development of such multilayer structures and the overall and long-term performance of such optical systems have received a boost over the last decades. Inside these lithographic machines, optical multilayer components are not only exposed to high fluxes of EUV radiation, but also to a peculiar type of plasma which is induced by photo-ionization of the low pressure background gas inside these machines [23], [24]. The impact of this overall plasma+photon atmosphere on the multilayer structures used can be both disadvantages (e.g.…”
Section: Mirror Technologymentioning
confidence: 99%
“…In the past 25 years, main focus has been on the interactions of EUV and plasma with the mirror surfaces facing the EUV and EUV plasma. 5 However, for molecular and particle contamination control, the interaction of plasma with the construction and functional materials close to the beam must be optimized.…”
Section: Introductionmentioning
confidence: 99%