A numerical simulation tool for nanoscale ion‐sensitive field‐effect transistor

Abdolkader, Tarek M.

doi:10.1002/jnm.2170

Cited by 9 publications

(3 citation statements)

References 14 publications

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“…Abdolkader developed Nanoscale ISFET Simulation Tool (NIST) for simulating nanoscale ISFET by merging the GCS model equations with the ballistic MOSFET analytical equations. [ 546 ] A system of nonlinear equations were formed, which are solved iteratively to yield the sensor response, where numerical solution is obtained through MATLAB ® software. The effect of device parameters and liquid‐gate biasing on the sensitivity of the sensor has been studied for various sensing films.…”

Section: Isfet Device Simulationmentioning

confidence: 99%

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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The demand for miniaturized point‐of‐care chemical/biochemical sensors has driven the development of field‐effect transistors (FETs) based pH sensors over the last 50 years. This paper aims to review the fabrication technologies, device structures, sensing film materials, and modeling techniques utilized for FET‐based pH sensors. We present the governing principles of potentiometric sensors, with major focus on the working principles of ion‐sensitive FETs (ISFETs). We extensively review different sensing film materials deposited by various techniques, which is critical to the sensing performance of ISFETs. The popular fabrication technologies have been presented, with special emphasis on state‐of‐the‐art silicon‐on‐insulator based technology, which can achieve high sensitivity by utilizing the dual‐gate effect. Furthermore, recent advancements in nano‐ISFETs has been elucidated. We also discuss the adoption of unmodified complementary metal‐oxide semiconductor (CMOS) ISFETs using standard CMOS processes, which has enabled the fabrication of integrated ISFET arrays, which are especially suited for ion‐imaging applications. Moreover, recent developments in extended‐gate FETs has been discussed, which have gained lot of attention due to their design flexibility and ease of fabrication, which is desirable for wearable sensing applications. In addition, recently there have been efforts to utilize nonsilicon channel materials for pH‐sensing application to obtain superior performance and various channel materials have been reviewed. Finally, we have extensively reviewed the ISFET device modeling and simulation techniques using various computer‐aided design tools, which aid in sensor design and characterization.

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Section: Isfet Device Simulationmentioning

confidence: 99%

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

Sinha

Pal

2021

Electrochemical Science Adv

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“…The corresponding distribution of the potential is shown in (Fig. 6b), Eref is the electric potential at the reference gate electrode, ψdiff is the electric potential at the edge of (OHP), ψi is the electric potential at the interface of the electrolyte, and insulator, and ψs is the electric potential at the interface of the semiconductor and insulator [43]. From the Gauss law [44]:…”

Section: Isfet Modellingmentioning

confidence: 99%

A review of ion-sensitive field effect transistor (ISFET) based biosensors.

Hassan,

Abdolkader

2023

International Journal of Materials Technology and Innovation

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The invention of sensors that can identify and measure biomolecules is a crucial advancement for biology. Sensors have become widely used in several industries during the last few decades, most notably in the area of medical diagnosis. Biosensors constitute a bio-detecting system by integrating signal conversion and biological recognition components. They have been developed for a wide range of bio-detecting applications. A class of biosensors known as electrochemical biosensors uses electroanalytical equipment and has the advantages of higher sensitivity, simplicity, speed, and biomolecule recognition selectivity. One of the most popular electrochemical biosensors nowadays is the ISFET sensor, which performs biochemical measuring and biomolecule recognition. ISFETs, which were first suggested a little over fifty years ago, now the most promising devices for care diagnostics and lab on a chip are made with ISFETs. In this review paper, the history, working principles, fabrication processes, and modeling and simulation techniques of ISFET are presented. Additionally, some physical aspects and simulation methodologies are explained. Finally, we discuss their applications in sensitively and reliably analyzing diverse biomolecules, including DNA, enzymes, and cells.

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“…In recent years, the research community has exhibited a rising interest in field-effect transistors (FET)-based biosensors. FET biosensors are known for their high sensitivity, responsivity, scalability, and portability along with reduced costs and power consumption [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. Ion-sensitive FET (ISFET) is a specialized FET sensor that accounts for a change in surface potential in the presence of a sensing insulating layer.…”

Section: Introductionmentioning

confidence: 99%

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

De¹,

Kanrar²,

Sarkar³

2022

Semicond. Sci. Technol.

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Field Effect Transistor (FET) pH sensors are being studied for a long time due to their low cost, sound sensitivity, and high operational speed. In recent times, Transition Metal Dichalcogenides (TMD) materials like MoTe2, MoS2, etc., have emerged as promising channel materials for energy-efficient electronic devices. TMD-based sensors show excellent results due to the high surface area-volume ratio and better bio-specific interaction. This paper proposes and analyses a MoTe2 channel-based dual-cavity accumulation MOSFET as a pH sensor. For a comprehensive study, a pH-FET noise model has been considered to investigate the amount of noise associated with the proposed FET under various ionic concentrations and device dimensions. The electrolytic semiconductor has been modeled based on ion dynamics for the simulation study. Site-Binding Model has been incorporated to capture the surface charge density fluctuation at the interface of electrolyte and gate-oxide for different pH values. The effect of gate length scaling on the device performance is studied to comprehend its scalability. With this MoTe2-based dual-cavity accumulation MOSFET sensor, a peak threshold sensitivity of 77 mV/pH has been obtained. To provide a comparative performance analysis of the proposed work, a benchmarking figure is included in the manuscript and a detailed fabrication methodology has also been presented. All simulations are done with an experimentally calibrated setup in SILVACO TCAD.

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A numerical simulation tool for nanoscale ion‐sensitive field‐effect transistor

Cited by 9 publications

References 14 publications

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A review of ion-sensitive field effect transistor (ISFET) based biosensors.

Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor

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A numerical simulation tool for nanoscale ion‐sensitive field‐effect transistor

Cited by 9 publications

References 14 publications

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling

A review of ion-sensitive field effect transistor (ISFET) based biosensors.

Noise analysis of MoTe2-based dual-cavity MOSFET as a pH sensor

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Noise analysis of MoTe₂-based dual-cavity MOSFET as a pH sensor