Due to limitations of Silicon, Transition metal dichalcogenides (TMD) based biosensors are popular in the recent times. In TMD family, Molybdenum telluride (MoTe2) is being studied a lot for different biosensing application. However, for DNA detection using TMD based DMFET, the effect of the electrical variations in DNA has not been studied before. Also, the impact of DNA-Electrode interaction on transducer level of DMFET is yet to be studied. In this article, we have proposed a Molybdenum telluride (MoTe2) based Accumulation Mode Field Effect Transistor (AMFET) for possible dielectric modulated biosensing application. The study is focused on DNA detection including the electric variations of DNA due to surface interaction. We have done a circuit level analysis of the proposed structure for having deeper insights into its performance under various DNA orientations in the nanogap. We have also presented a benchmarking to highlight the superior sensitivity of the proposed structure (ΔVth = 700mV at K =8). The impact of back-gate bias is also included. We have obtained signi cant variation of threshold voltage shift for different orientation in the proposed structure suggesting strong impact of electrical variations in DNA in biosensing performance of MoTe2 AMFET.
Field Effect Transistor (FET) pH sensors are being studied for a long time due to their low cost, sound sensitivity, and high operational speed. In recent times, Transition Metal Dichalcogenides (TMD) materials like MoTe2, MoS2, etc., have emerged as promising channel materials for energy-efficient electronic devices. TMD-based sensors show excellent results due to the high surface area-volume ratio and better bio-specific interaction. This paper proposes and analyses a MoTe2 channel-based dual-cavity accumulation MOSFET as a pH sensor. For a comprehensive study, a pH-FET noise model has been considered to investigate the amount of noise associated with the proposed FET under various ionic concentrations and device dimensions. The electrolytic semiconductor has been modeled based on ion dynamics for the simulation study. Site-Binding Model has been incorporated to capture the surface charge density fluctuation at the interface of electrolyte and gate-oxide for different pH values. The effect of gate length scaling on the device performance is studied to comprehend its scalability. With this MoTe2-based dual-cavity accumulation MOSFET sensor, a peak threshold sensitivity of 77 mV/pH has been obtained. To provide a comparative performance analysis of the proposed work, a benchmarking figure is included in the manuscript and a detailed fabrication methodology has also been presented. All simulations are done with an experimentally calibrated setup in SILVACO TCAD.
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