1999
DOI: 10.1109/55.806106
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A novel planarized, silicon trench sidewall oxide-merged p-i-n Schottky (TSOX-MPS) rectifier

Abstract: A new high-voltage rectifier structure, a planarized silicon Trench Sidewall OXide Merged P-i-n Schottky (TSOX-MPS) rectifier is described. This TSOX-MPS rectifier exhibits a far superior switching performance, compared to the p-in rectifier, for the same reverse leakage current and on-state voltage. In addition, for the same lifetime, the reverse leakage current of the TSOX-MPS rectifier is equal to that of the p-i-n rectifier, not so much sensitive than the MPS rectifier does. These aspects of the TSOX-MPS r… Show more

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Cited by 6 publications
(1 citation statement)
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“…To overcome this problem, a high-voltage trench sidewall oxide-merged pin/Schottky (TSOX-MPS) rectifier [21,22], as shown in Figure 20 reduce both I RP and Q rr . This hybrid rectifier is actually a junction rectifier with adjacent Schottky regions separated with sidewall spacers.…”
Section: High-voltage Si Trench Rectifiersmentioning
confidence: 99%
“…To overcome this problem, a high-voltage trench sidewall oxide-merged pin/Schottky (TSOX-MPS) rectifier [21,22], as shown in Figure 20 reduce both I RP and Q rr . This hybrid rectifier is actually a junction rectifier with adjacent Schottky regions separated with sidewall spacers.…”
Section: High-voltage Si Trench Rectifiersmentioning
confidence: 99%