Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

Liou, Bor Wen

doi:10.1016/j.tsf.2009.04.031

Cited by 11 publications

(6 citation statements)

References 12 publications

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“…The increased I LC can be attributed to a higher number of minority charge carriers passing through the tunnel. Furthermore, the electric field at the edges of the diode is smaller than in the middle due to the high electric field in the depletion region, leading to an increase in edge leakage current [3][4][5]. According to Matthews et al [20], the I LC increases due to the smaller particles acting on the larger interfacial area between the particles.…”

Section: Resultsmentioning

confidence: 99%

“…When the design and optimization of the RC are not carried out effectively, edge effects can occur in diodes. These effects are attributed to the electric field and current distribution at the edges of the diode, leading to electrical disturbances [3][4][5]. Minimizing edge effects can enhance the electrical parameters and performance of the diode.…”

Section: Introductionmentioning

confidence: 99%

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Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Sevgili,

Orak

2023

J. Phys.: Condens. Matter

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The Ag/Mg3N2/p-Si heterojunction diode (HD) with rectifier contacts with the same area in various geometries were fabricated through thermal evaporation, and the electrical performances of these diodes was compared. The geometry of the rectifier contact was found to affect various electrical properties such as ideality factor, saturation current and barrier height of HD, the rectifier rate, and the leakage current of the diodes. The experimental demonstrated the HD with a circular rectifier contact exhibited a higher rectifying ratio and lower leakage current compared to the other rectifier contacts. Hence, the design and optimization of the rectifier contact play a critical role in achieving the desired electrical properties of diode. These diodes, featuring an Mg3N2 interfacial layer and showcasing photoconductive behavior, can be utilized as photodiodes in various optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Sevgili,

Orak

2023

J. Phys.: Condens. Matter

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“…Then highly N-doped µc-Si is deposited followed immediately by the deposition of silicon nitride. Silicon nitride is used to reduce electric field stress at edge terminations and to minimize leakage current of diode at reverse bias regime (7,8). After RIE etching of this silicon nitride to define the diode area, lightly N-doped µc-Si films is deposited and then gold contact film is evaporated.…”

Section: Schottky Diode Fabricationmentioning

confidence: 99%

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

et al. 2010

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The design and fabrication of high efficiency low cost electronics components for commercial and industrial applications is very challenging. In this paper we introduce a fabrication of Schottky diode dedicated to high frequency rectification. The devices are prepared on Corning glass substrate with a configuration Au /µc-Si:H /Al and by using microcrystalline silicon as semiconductor. Photolithographic masks are used for diodes fabrication. Two processes are carried out to optimize Schottky diode characteristics. Silicon films are deposited in an usual RF PECVD reactor at low temperature (165°C). Current -voltage (I-V) characteristics are measured and plotted to determine the different parameters of Schottky contact such as ideality factor and rectifying ratio. At 13.56 MHz which is common in RFID frequency application, this Schottky diode in association with parallel load capacitor can be used to build an efficient rectifier.

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“…There have been several studies discussed the edge effect that caused the leakage current [ 5 ]. The guard ring structure of p + poly Si and metal oxide were studied to suppress the leakage current of the SBDs [ 6 , 7 , 8 ]. The interface between the substrate with existed multiple defects can also be removed by a treating plasma cleaning process and an annealing process [ 9 , 10 , 11 ].…”

Section: Introductionmentioning

confidence: 99%

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

Cheng

Houng

et al. 2018

Materials

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In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV.

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Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

Cited by 11 publications

References 12 publications

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

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Fabrication of high breakdown voltage silicon Schottky barrier diodes using various edge termination structures

Cited by 11 publications

References 12 publications

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

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Product

Resources

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Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer