Schottky Diode Based on Microcrystalline Silicon Deposited at 165°C for RFID Application

Abstract

The design and fabrication of high efficiency low cost electronics components for commercial and industrial applications is very challenging. In this paper we introduce a fabrication of Schottky diode dedicated to high frequency rectification. The devices are prepared on Corning glass substrate with a configuration Au /µc-Si:H /Al and by using microcrystalline silicon as semiconductor. Photolithographic masks are used for diodes fabrication. Two processes are carried out to optimize Schottky diode characteristics. Silicon films are deposited in an usual RF PECVD reactor at low temperature (165°C). Current -voltage (I-V) characteristics are measured and plotted to determine the different parameters of Schottky contact such as ideality factor and rectifying ratio. At 13.56 MHz which is common in RFID frequency application, this Schottky diode in association with parallel load capacitor can be used to build an efficient rectifier.