Low temperature deposited RF‐PECVD undoped, arsenic and boron doped μc‐Si:H films are used to fabricate the N‐type and P‐type TFTs on the same glass substrate. The transistors have a coplanar top gate configuration and a silicon nitride as gate insulator. The 50 nm thin μc‐Si:H active layer showed a thermal activation energy of the conductivity of 0.57 eV and a crystalline volume fraction of 70%. The arsenic and boron doped μc‐Si:H source/drain contact layers showed a conductivity at room temperature of 5 S/cm and 2.5 S/cm respectively. These TFTs showed a field effect mobility of 0.3 cm2/V.s for electrons and 0.2 cm2/V.s for holes and an (ION/IOFF) current ratio of 107. These results show the possibility to produce CMIS (Complementary Metal Insulator Semiconductor) inverter with silicon nitride as gate insulator at very low temperature compatible with foreign substrates such as flexible plastics or textiles. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Top‐gate TFTs are fabricated at T < 200 °C using μc‐Si:H film with different thickness, 30, 100 and 200 nm as active layer. Silicon nitride deposited at 150 °C is used as gate insulator. Due to improved crystallinity, mobility increases with the μc‐Si:H thickness. However, the columnar structure of thick μc‐Si:H films induces some shift of the TFT's characteristics. The denser structure of thinnest film, constituted by nano‐grains embedded in amorphous phase, leads to highly stable TFTs. Present results show that a mean way between the needs of high crystallinity, obtained in high thick films, and stability, obtained with dense material, has to be found in μc‐Si:H low temperature technology (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The design and fabrication of high efficiency low cost electronics components for commercial and industrial applications is very challenging. In this paper we introduce a fabrication of Schottky diode dedicated to high frequency rectification. The devices are prepared on Corning glass substrate with a configuration Au /µc-Si:H /Al and by using microcrystalline silicon as semiconductor. Photolithographic masks are used for diodes fabrication. Two processes are carried out to optimize Schottky diode characteristics. Silicon films are deposited in an usual RF PECVD reactor at low temperature (165°C). Current -voltage (I-V) characteristics are measured and plotted to determine the different parameters of Schottky contact such as ideality factor and rectifying ratio. At 13.56 MHz which is common in RFID frequency application, this Schottky diode in association with parallel load capacitor can be used to build an efficient rectifier.

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