A novel field effect transistor with dielectric polymer gel

Kösemen, Arif; San, Sait Eren; Okutan, Mustafa; Doğruyol, Zekeriya; Demir, Ahmet; Yerli, Yusuf; Sengez, Busra; Başaran, E.; Yılmaz, Faruk

doi:10.1016/j.mee.2010.08.004

Cited by 9 publications

(7 citation statements)

References 24 publications

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“…In the last decade, the organic semiconductor devices such as organic diodes, organic solar cells (OSCs), organic light-emitting diodes (OLEDs) and organic field effect transistors (OFETs) have been important subjects to be studied by the scientists [1][2][3][4][5][6]. Organic semiconductors are less expensive and more flexible than inorganic counterparts.…”

Section: Introductionmentioning

confidence: 99%

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Yıldız

Karakus

Toppare

et al. 2014

Materials Science in Semiconductor Processing

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Section: Introductionmentioning

confidence: 99%

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Yıldız

Karakus

Toppare

et al. 2014

Materials Science in Semiconductor Processing

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“…Two nonmagnetic substrates of a polyethylene terephthalate (PET) film (30 mm Â 3 mm Â 100 lm, substrate-1) and a quartz substrate (30 mm Â 3 mm Â 1 mm, substrate-2) were used to fabricate TFTs. 6,9,23 Ni (3 nm)/Au (47 nm) electrodes were vapor-deposited. Ion-gel layers consisted of [EMIM][TFSI] and PS-PMMA-PS were fabricated by dropcasting on the gate electrode.…”

mentioning

confidence: 99%

“…Finally, substrate-1 was placed on substrate-2 to complete the TFT fabrication. 6,9,23 All measurements were performed at room temperature in the dark and under vacuum conditions. Next, we confirm standard transistor operation.…”

mentioning

confidence: 99%

Two-dimensional magnetic interactions and magnetism of high-density charges in a polymer transistor

Tsuji

Takahashi

Sakurai

et al. 2013

Applied Physics Letters

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Magnetic interactions and magnetism of high-density charges in a polymer transistor were investigated by electron spin resonance (ESR). The anisotropy of the ESR spectra indicated an edge-on molecular orientation and the existence of two-dimensional magnetic interactions between the spins of the charges, reflecting high charge density. The voltage dependences revealed that the magnetism of charge carriers changed from paramagnetic to nonmagnetic as charge density increased. These results provide insight to the charge transport mechanism of polymer semiconductors with high charge densities.

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“…On the other hand, using non-ionic gel gate dielectrics (NIGDs) is another viable option, which does not only provides the devices having high performance but also brings about inexpensive designs with simple fabrication techniques. Some studies in the literature have used this technique named those kinds of transistors as non-ionic gel OFETs (NIGOFETs) and proved their feasibility [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Performance Comparison of Low-Voltage non-Ionic Gel Organic Field Effect Transistors with Gold and PEDOT:PSS Gate Electrodes

Yardım

Yücedağ

Allı

et al. 2020

IJAEFEA

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Low-voltage non-ionic gel organic-field effect transistors (NIGOFETs) with two kinds of gate electrode materials namely gold (Au) and poly(3,4ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) formulation were fabricated in top-gate bottom-contact geometry to investigate the effects of gate electrodes on the electrical performance of the OFETs. In addition, three kinds of gate dielectrics were used for both types of transistors to understand the effects more thoroughly. As a result, it can be deduced from the data that NIGOFETs with Au gate electrodes (Au-NIGOFETs) display better performance considering higher mobility and on-to-off current ratio (ION/IOFF) as well as lower Subthreshold Swing (SS) of them. Besides, the threshold voltage (VTH) effects-free drain currents (IDS) of the Au-NIGOFETs surpasses those of the PEDOT:PSS formulation gated NIGOFETs (Pedot-NIGOFETs). This is probably due to having greater WF gate electrode (in our case Au) provides less injection barrier eventually leads to relatively unimpeded charge transportation. Nevertheless, Au-NIGOFETs interestingly proves to have further negative VTH and lower off-current (IOFF), which may be attributed to lower electrical resistivity (ρ) of the Au leading to denser charge carrier traps formation along with intensified charge carrier induction at the semiconductor-dielectric interface when the gate-to-source voltage (VGS) is less than VTH. However, because of the same reason, when VGS exceeds the VTH for example, IDS of Au-NIFOFET1 starts to increase in such a quick manner that enabling it to have higher ION/IOFF and lower SS.

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A novel field effect transistor with dielectric polymer gel

Cited by 9 publications

References 24 publications

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Leakage current by Frenkel–Poole emission on benzotriazole and benzothiadiazole based organic devices

Two-dimensional magnetic interactions and magnetism of high-density charges in a polymer transistor

Performance Comparison of Low-Voltage non-Ionic Gel Organic Field Effect Transistors with Gold and PEDOT:PSS Gate Electrodes

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