A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique

Raffo, Antonio; Avolio, Gustavo; Vadalà, Valeria; Schreurs, Dominique; Vannini, G.

doi:10.1109/lmwc.2015.2496794

Cited by 9 publications

(7 citation statements)

References 10 publications

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“…Clearly, if non‐quasi‐static effects are present, they must be correctly accounted for (e.g., Refs. ).…”

Section: Measurement‐based Waveform Engineeringmentioning

confidence: 97%

“…The currents obtained after this transformation can be simply expressed as the vector sum of the contributions coming from the resistive and the capacitive cores, which are in parallel (Figure ), as expressed by Equation . To identify the capacitive‐core contribution, a model‐based description of the nonlinear capacitances has to be exploited, which can be identified by adopting standard multi‐bias S‐parameter measurements or nonlinear measurements . When non‐quasi‐static effects can be neglected, the intrinsic capacitive currents can be directly calculated from Equation .…”

Section: Measurement‐based Waveform Engineeringmentioning

confidence: 99%

“…where the capacitance matrix C can be identified by means of multi-bias S-parameters, 54 although other modeling approaches may be implemented without any loss of generality (e.g., Refs. 55,56). Clearly, if non-quasi-static effects are present, they must be correctly accounted for (e.g., Refs.…”

Section: Low-frequency Waveform Engineering: the Nonlinear-embeddinmentioning

confidence: 99%

“…To identify the capacitive-core contribution, a model-based description of the nonlinear capacitances has to be exploited, which can be identified by adopting standard multi-bias S-parameter measurements 8,55 or nonlinear measurements. 55,56 When nonquasi-static effects can be neglected, the intrinsic capacitive currents can be directly calculated from Equation 2. Once this operation has been carried out, the reactive and resistive components can be separated using Equation 3.…”

Section: High-frequency Waveform Engineeringmentioning

confidence: 99%

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Waveform engineering: State-of-the-art and future trends (invited paper)

Raffo

Vadalà

Bosi

et al. 2016

Int. J. RF Microw. Comput. Aided Eng.

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The term waveform engineering denotes all those circuit design techniques that are based on shaping the transistor voltage and current waveforms. From a general perspective, these design techniques can be grouped in two main categories according to the adopted design tool: measurement- and model-based. In the last two decades, thanks to the proliferation of setups enabling calibrated waveform acquisition at microwave frequencies, waveform engineering has attracted continuously increasing interest in the microwave engineering community. In this article, a comprehensive analysis of the waveform-engineering based design techniques is reported, paying particular attention to the advantages and drawbacks associated to each approach

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“…Clearly, if non‐quasi‐static effects are present, they must be correctly accounted for (e.g., Refs. ).…”

Section: Measurement‐based Waveform Engineeringmentioning

confidence: 97%

Section: Measurement‐based Waveform Engineeringmentioning

confidence: 99%

Section: Low-frequency Waveform Engineering: the Nonlinear-embeddinmentioning

confidence: 99%

Section: High-frequency Waveform Engineeringmentioning

confidence: 99%

See 2 more Smart Citations

Waveform engineering: State-of-the-art and future trends (invited paper)

Raffo

Vadalà

Bosi

et al. 2016

Int. J. RF Microw. Comput. Aided Eng.

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“…In [19]- [21] we were driven by the need of extracting models for transistors by using experimental data that reproduced operating conditions as close as possible to those in real-life, but beyond the limitations of today's vector calibrated nonlinear measurement systems. We have shown that this approach can be used in various situations, including modeling of transistors for high-efficiency amplifier design [22] and modeling of transistors' non-quasi static effects [23], [24].…”

Section: Introductionmentioning

confidence: 99%

Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Avolio

Raffo

Vadalà

et al. 2016

IEEE Trans. Microwave Theory Techn.

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We present the first application of the recently introduced dynamic-bias measurement to the acquisition of the scattering (S-) parameters of microwave transistors under large-signal operating conditions. We demonstrate that by properly acquiring and processing dynamic-bias measurements, one can derive the S-parameters of a nonlinear device-under test across a time-varying large-signal operating point (LSOP). Interestingly, these time-varying S-parameters can be used similar to the conventional S-parameters for characterization and modeling purposes. As compared with similar existing approaches, like those based on the pulsed S-parameter measurements, with the proposed technique, one can obtain, as a result of one measurement, the frequency-dependent S-parameters at each instantaneous point touched by the LSOP. We report experimental dynamic-bias S-parameters of a 0.15-μm GaAs pHEMT and a 0.25-μm GaN HEMT

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Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Alim

Ali

Crupi

2021

Int J Numerical Modelling

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The key objective of this study is to check out the performance of two multilayer processed double‐heterojunction pHEMTs with different gate width as well as one conventional single‐heterojunction HEMT. Different types of investigation have been undertaken by means of on‐wafer DC, small‐signal, and nonlinear two‐tone measurements. The modeling of the DC output characteristics was successfully accomplished using the FET's Curtice model for all of three tested devices. The main figures of merit for microwave and millimeter wave applications have been determined from scattering parameter measurements and then discussed in detail. Furthermore, to attain a better insight of the device behavior, the nonlinear intermodulation distortion behavior has been also studied and compared for the three devices over different bias conditions. A careful analysis of the DC and RF characteristics over a wide range of working conditions is necessary to ensure adequate transistor operation, depending on the given application of interest.

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A Non-Quasi-Static FET Model Extraction Procedure Using the Dynamic-Bias Technique

Cited by 9 publications

References 10 publications

Waveform engineering: State-of-the-art and future trends (invited paper)

Waveform engineering: State-of-the-art and future trends (invited paper)

Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

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