Dynamic-Bias S-Parameters: A New Measurement Technique for Microwave Transistors

Abstract

We present the first application of the recently introduced dynamic-bias measurement to the acquisition of the scattering (S-) parameters of microwave transistors under large-signal operating conditions. We demonstrate that by properly acquiring and processing dynamic-bias measurements, one can derive the S-parameters of a nonlinear device-under test across a time-varying large-signal operating point (LSOP). Interestingly, these time-varying S-parameters can be used similar to the conventional S-parameters for characterization and modeling purposes. As compared with similar existing approaches, like those based on the pulsed S-parameter measurements, with the proposed technique, one can obtain, as a result of one measurement, the frequency-dependent S-parameters at each instantaneous point touched by the LSOP. We report experimental dynamic-bias S-parameters of a 0.15-μm GaAs pHEMT and a 0.25-μm GaN HEMT

A HEMT large‐signal model for use in the design of microwave switching circuits

“…In addition, surface trapping effect in channel current was found not important to switch applications. However, when the devices are severely affected by surface trapping, it can be accurately accounted for by using new nonlinear measurement techniques which can mimic the realistic operation of the devices. In Figure , as V DS changes from −4 V to 4 V, it is equal to that V GD changes from −1 V to −9 V ( V GD = V GS − V DS , V GS = − 5 V).…”

Multilayer perceptron–random forest based hybrid machine learning–neural network model for GaN high electron mobility transistor's parameter estimations

“…One of the main focus of current research is analyze and further develop GaN HEMTs for next generation high power applications. Several research groups have also ventured into experimental characterization and measurements in order to investigate the thermal and trapping effects under wide operating bias conditions 18–23 . Moreover, it becomes equally important to deal with several implications at circuit level as well.…”

“…Several research groups have also ventured into experimental characterization and measurements in order to investigate the thermal and trapping effects under wide operating bias conditions. [18][19][20][21][22][23] Moreover, it becomes equally important to deal with several implications at circuit level as well. For realistic device conditions at high voltage levels, the TCAD studies were also carried out in the present work upto 20 Volt.…”

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

“…These DUTs were experimentally investigated in order to access their capability for microwave applications. The importance of this crucial task can be seen in the fact that, over the years, many studies have been focused on the characterization of DC, 23‐26 small‐signal, 25‐31 and nonlinear characteristics 32‐37 of the GaAs HEMT technology. The DC output characteristics of the DUTs have been modeled using the well‐known FET's Curtice model 38,39 .…”