1999
DOI: 10.1016/s0168-583x(99)00312-2
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A new approach to nuclear microscopy: the ion–electron emission microscope

Abstract: A new multidimensional high lateral resolution ion beam analysis technique, Ion-Electron Emission Microscopy or IEEM is described. Using MeV energy ions, IEEM is shown to be capable of Ion Beam Induced Charge Collection (IBICC) measurements in semiconductors. IEEM should also be capable of microscopically and multidimensionally mapping the surface and bulk composition of solids. As such, IIEM has nearly identical capabilities as traditional nuclear microprobe analysis, with the advantage that the ion beam does… Show more

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Cited by 37 publications
(20 citation statements)
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“…This unity detected event probability guarantees that this type of analysis minimizes the amount of radiation darnage to the sample. This is not necessarily the case with the Nuclear Emission Microscopy method, as has been discussed previously [1].…”
Section: Receivedmentioning
confidence: 87%
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“…This unity detected event probability guarantees that this type of analysis minimizes the amount of radiation darnage to the sample. This is not necessarily the case with the Nuclear Emission Microscopy method, as has been discussed previously [1].…”
Section: Receivedmentioning
confidence: 87%
“…2b and reference [1], with IEEM a beam of MeV ions, provided by an accelerator, impinges on a semiconductor sample (currently at an angle of 75°with the surface normal) which is usually coated with a thin metal layer to enhance production of particles, which in this case are secondary electrons. The secondary electrons which are generated by each ion (and shown to originate at X,Y in Fig.…”
Section: Ion-electron Emission Microscopy (Ieem)mentioning
confidence: 99%
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