Abstract-We report the electron and hole charge transport properties of semi insulating CdTe:Cl grown by the Travelling Heater Method (THM). An alpha-particle Time of Flight (TOF) method was used to measure electron and hole drift mobility, with room temperature values of 880 cm 2 /Vs for electrons and 90 cm 2 /Vs for holes. The variation in mobility was also investigated as a function of temperature, with electron and hole mobilities at 190 K of 1150 cm 2 /Vs and 20 cm 2 /Vs respectively. Using a Hecht analysis the electron and hole mobility-lifetime products were also measured over the same temperature range, with values at room temperature of 8 10 4 cm 2 /V and 7 10 5 cm 2 /V respectively. Time-resolved ion beam induced charge (IBIC) imaging was used to produce micrometer resolution maps of electron drift mobility and signal amplitude, which showed excellent spatial uniformity.

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Diamond has been regarded as a promising radiation detector material for use as a solid state ionizing chamber for decades. The parameters degrading the charge transport from what is expected from an ideal crystal are still not completely understood. Recently, synthetic chemical vapor deposited ͑CVD͒ single crystal diamond has become available, offering the opportunity to study the properties of synthesized material independent of grain boundaries. We have studied the charge transport of a synthetic single crystal diamond with ␣-particle induced charge transients as a function of temperature and established the presence of a shallow hole trap with an activation energy of 0.29± 0.02 eV in some parts of the detector. Ion beam induced charge imaging has been used to study the spatial variations of the charge transport in a synthetic single crystal diamond. Pulses influenced by the shallow hole trap had their origin close to the substrate/CVD interface of the sample. They could be clearly distinguished from pulses affected by reduced charge carrier velocities due to polarization phenomena, which varied systematically with the growth direction of the CVD diamond material.

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Analysis using MeV ion beams is a thin film characterisation technique invented some 50 years ago which has recently had the benefit of a number of important advances. This review will cover damage profiling in crystals including studies of defects in semiconductors, surface studies, and depth profiling with sputtering. But it will concentrate on thin film depth profiling using Rutherford backscattering, particle induced X-ray emission and related techniques in the deliberately synergistic way that has only recently become possible. In this review of these new developments, we will show how this integrated approach, which we might call “total IBA”, has given the technique great analytical power