Articles you may be interested inUltrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistorsThe authors report a correlated study of the atom probe tomography (APT) of lattice matched AlInN/GaN and strained AlGaN/GaN high electron mobility transistor structures, before and after exposure to 60 Co irradiation. The AlInN/GaN exhibited a decrease in carrier density while the AlGaN/GaN was found to be more radiation tolerant. Analysis of the APT data revealed that the buried interface near the channel exhibited a much larger increase in isosurface roughness at the AlInN/GaN than at the AlGaN/GaN interfaces. This is believed to contribute to the scattering of carriers out of the channel, and the resulting deterioration of the charge transport characteristics. A proxigram analysis showed that the observed increased roughness at the AlInN/GaN heterointerface was not concurrent with a significant change in its diffuseness.

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Articles you may be interested inHigh precision measurements of arsenic and phosphorous implantation dose in silicon by secondary ion mass spectrometry J.Improved secondary ion mass spectroscopy detection limits of hydrogen, carbon, and oxygen in silicon by suppression of residual gas ions using energy and ejection angle filtering J. Vac. Sci. Technol. A 15, 2542 (1997); 10.1116/1.580767 Characterizing flat panel display materials using quadrupole-based secondary ion mass spectrometry J. Vac. Sci. Technol. A 15, 1724 (1997); 10.1116/1.580927High sensitivity impurity measurements in semiconductors using trace-element accelerator mass spectrometry (TEAMS) AIP Conf.

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