A Multiband Reconfigurable Power Amplifier for UMTS Handset Applications

Kim, Unha; Kang, Sung Goon; Woo, Jungrin; Kwon, Youngwoo; Kim, Jung-Hyun

doi:10.1109/tmtt.2012.2201744

Cited by 35 publications

(18 citation statements)

References 19 publications

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“…The PIN diode has the power rating of approximately 300 mW which is good enough for mobile phone applications. The PIN diodes are switched by a well-known control circuitry reported in [13]. The PIN diode is switched off when it is reverse biased (Vcc−Vsw < 0 V) and switched on when it is forward biased (V cc −V sw > V D,on ).…”

Section: B Implementation Of the Multi-band Power Amplifiermentioning

confidence: 99%

A Multiband Power Amplifier With a Reconfigurable Output-Matching Network for 10-MHz BW LTE Mobile Phone Applications

Lee

Jung

Song

2015

IEEE Trans. Circuits Syst. II

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Abstract-A single-chip power amplifier (PA) with a reconfigurable output-matching network is presented for 4G multi-band mobile phone application. The multi-band PA (MBPA) consists of an amplifier and a reconfigurable output-matching network (a band selection circuit and a tunable transmission line). Multi-band, load-impedance modulation is done by controlling a PIN switch of the band selection circuit and varactor diodes of the tunable transmission line in the reconfigurable output-matching network. This MBPA delivered a gain of more than 11 dB, an adjacent-channel-leakage ratio of the evolved universal mobile telecommunications system (UMTS) terrestrial radio access (E-UTRA) smaller than −32 dBc, and a power-added efficiency (PAE) larger than 29% at the output power of 26 dBm for high and low frequency bands with a 10 MHz 16quadrature amplitude modulation long-term-evolution signal.Index Terms -long-term-evolution, multi-band, power amplifier, PAE, reconfigurable output-matching network.1549-7747 (c)

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Section: B Implementation Of the Multi-band Power Amplifiermentioning

confidence: 99%

A Multiband Power Amplifier With a Reconfigurable Output-Matching Network for 10-MHz BW LTE Mobile Phone Applications

Lee

Jung

Song

2015

IEEE Trans. Circuits Syst. II

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“…The reconfigurable output matching network (OMN) consists of three parts; fixed output matching network (FOMN), frequency reconfigurable network (FRN), and path selection network (PSN) [4]. Although the basic operation principle of reconfigurable output matching networks is based on [4], however reconfigurable output matching networks including L-C "multi-section" structures for broad-band are introduced and verified not only for UMTS/LTE but for GMSK/EDGE.…”

Section: Circuit Design and Fabricationmentioning

confidence: 99%

“…On the other hand, the reconfigurable matching approach has a great potential for MMMB PA implementation, in which the switchable networks provide optimum matching conditions for each band without significant efficiency degradation [3]- [6]. approaches and showed minimal post-PA distribution loss by using simple path selection networks [4] or compact post-PA distribution switches integrated into the reconfigurable network with silicon-on-insulator CMOS process [5]. However, it is worthwhile to note that these kinds of the reported MMMB approaches have been mainly limited just for 3G/4G multi-band application, in which a 2G/2.5G PA is separately added in a module for multi-mode operation, meaning a MMMB PA module needs more than two PA-cores.…”

Section: Introductionmentioning

confidence: 99%

A Multi-Mode Multi-Band Reconfigurable Power Amplifier for 2G/3G/4G Handset Applications

Kang

Kim

2015

IEEE Microw. Wireless Compon. Lett.

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Fully-integrated multi-mode multi-band (MMMB) reconfigurable power amplifier (PA) is implemented using single PA-cores for high-and low-frequency bands, respectively. This PA has five output paths and covers quad-band Gaussian Minimum Shift Keying/Enhanced Data Rates for Global Evolution and penta-band Universal Mobile Telecommunications System/Long Term Evolution mode operation with band combination in a small form-factor. To optimize the PA, the proposed structure reconfigures the PA-core cells as well as the interstage/output matching network. When compared with the single-mode single-band dedicated PAs, the fabricated PA showed comparable RF performance for all modes and bands, except for PAE degradations of 3.1% and 1.9% for high-and low-band, respectively, thus validating the usefulness of the proposed structure for MMMB PA applications.Index Terms-Multi-band, multi-mode, penta-band UMTS/ LTE, quad-band GMSK/EDGE, reconfigurable power amplifier (PA), single PA-core.

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“…In this paper, in order to increase efficiency and gain, while maintaining linearization circuit, various techniques including differential, cascaded, multi-stage and matching circuits were utilized. Various techniques have been proposed in literature for linearization of power amplifier [1][2][3][4][5][6][7][8][9][10][11][12][13].…”

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confidence: 99%

A Highly Efficient and Linear Class AB Power Amplifier for RFID Application

Fazel¹,

Javidan²

2015

Bulletin EEI

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Power amplifiers (PAs) IntroductionRFID can provide automatic identification, tracking and management by radio frequency-based communication. RFID system is composed of two parts: transceivers and code reader. The main part of the RFID transmitter is linear power amplifier with high power. Since portable code readers are based on batteries, power amplifier consumes the largest part of power in code reader. So it is tried to have high efficiency. Moreover, linearity is one of the main parameters of power amplifiers (PAs). Class AB is widely used in wireless transceiver designs due to high linearity and high efficiency. In [1], a power amplifier composed of a parallel combination of amplifiers with Class A/AB led to improved linearity and increased power efficiency as well as reduced DC power consumption. In [2], the amplifier uses tuning technique in order to obtain the wide bandwidth and low power consumption, while it uses self-biased circuit to get high linearization. In [3], multi-band power amplifier uses a broadband matching network as a driver, while it uses reconfigurable matching network to increase the efficiency. In [4] and [5], the structure of CMOS power amplifier is constituted of input matching network, inter stage matching network, the output matching network, and a MOS switch-and varactor-based configurable tuning part .Uniformly coupled varactors with silicon on glass technology are used in order to implement tunable matching network, aiming at linearization improvement.In [6] and [7], the memory polynomial digital pre-distortion (DPD) technique is utilized for linearizing of amplifiers. Exploiting Class F, inverse Class F, Class J or Class AB/I are proposed for boosting of efficiency. In [8], [9] and [10] Doherty method and Envelope Elimination and Restoration (EER) techniques are presented for high efficiency. A combined approach that includes a switchable matching network using diplexer concepts and load line regulation as well as transistor reconfigurable area techniques are presented in [11]. In [12], a multi-L section, a quarter-wavelength transfer, and cone transmission line transfer are proposed for broadband matching networks. In [13], designing a linear amplifier with transistor level compensation technique is used to increase linearization of CMOS power amplifier.In this paper, first an overview of the proposed amplifier is presented and each block will be provided in detail. Then, the measured characteristics are shown at the 2400MHz frequency band.

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A Multiband Reconfigurable Power Amplifier for UMTS Handset Applications

Cited by 35 publications

References 19 publications

A Multiband Power Amplifier With a Reconfigurable Output-Matching Network for 10-MHz BW LTE Mobile Phone Applications

A Multiband Power Amplifier With a Reconfigurable Output-Matching Network for 10-MHz BW LTE Mobile Phone Applications

A Multi-Mode Multi-Band Reconfigurable Power Amplifier for 2G/3G/4G Handset Applications

A Highly Efficient and Linear Class AB Power Amplifier for RFID Application

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